Comparative analysis of electronic structure of and surfaces

Atuchin, V.V.; Grigorieva, T.I.; Kalabin, I.E.; Kesler, V. G.; Pokrovsky, L.D.; Shevtsov, D. I.

doi:10.1016/j.jcrysgro.2004.11.176

Cited by 20 publications

(7 citation statements)

References 14 publications

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“…Such a rapid progress in the development of LiNbO 3 device has been enabled by various engineering efforts to exclude many intrinsic problems in LiNbO 3 materials, and one of these problems is a DC-drift [1][2][3]. Electrical relaxation phenomena originating from the dielectric nature of the material systems used, which is a possible origin of DCdrift in the device are known to be significantly reduced by adopting a proper buffer layer over the waveguides and also by decreasing proton impurities in the LiNbO 3 wafer [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

DC-drift suppression of Ti: LiNbO3 waveguide chip by minimizing the contamination in oxide buffer layer

Kim¹,

Yang²,

Kim³

et al. 2006

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

DC-drift suppression of Ti: LiNbO3 waveguide chip by minimizing the contamination in oxide buffer layer

Kim¹,

Yang²,

Kim³

et al. 2006

Journal of Crystal Growth

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“…From the Nb 3d spectra (Figure b), we note that C-LNO-NCM811 exhibited characteristic peaks at 206.8 and 209.9 eV, mainly arising from pentavalent Nb 5+ , with traces of tetravalent Nb 4+ (208.4 eV) and trivalent Nb 3+ (210.5 eV) . In contrast, additional peaks of Nb 3+ and Nb 4+ were dominant in the spectrum of A-LNO-NCM811, likely due to the disordered bonding with short-range crystal ordering in the amorphous LiNbO 3 phase . Furthermore, A-LNO-NCM811 exhibited additional oxidation states in the O 1s spectra as a result of its amorphous nature, as is evident in Figure c.…”

Section: Resultsmentioning

confidence: 97%

Bifunctional Surface Coating of LiNbO₃ on High-Ni Layered Cathode Materials for Lithium-Ion Batteries

Kim

Choi

et al. 2020

ACS Appl. Mater. Interfaces

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High-Ni cathode materials with a layered structure generally suffer from structural instability induced by a highly reactive Ni component, especially at the surface. Crystalline LiNbO 3 , with excellent thermal stability and ionic conductivity, has the potential to considerably enhance the interfacial stability of these cathode materials. By optimizing the crystalline coating of bifunctional LiNbO 3 on a high-Ni cathode material, we are able to improve cycle performance and rate capability by minimizing the direct exposure of Ni with electrolytes. Since a LiNbO 3 coating layer directly affects electrochemical performance, we also focus on the correlation of LiNbO 3 crystallinity with electrochemical behaviors of Li + in the cathode materials. We show that the Li + conducting behaviors are closely related to the crystallinity of LiNbO 3 . Highly crystalline LiNbO 3 effectively suppresses the structural changes of the cathode materials by facilitating strain relaxation induced by repeated Li + intercalation and deintercalation into and from the host structure. Moreover, it offers strong enhancement in mechanical and thermal stabilities at elevated temperatures above 60 °C. In this regard, this research provides a practical solution for successfully utilizing high-Ni layered cathode materials in commercial LIBs.

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“…In addition ARXPS investigations proved that this oxidation/reduction is an interface and not a surface effect. Thus, a thermal treatment of 400 °C for 30 min is assumed to provide the necessary activation temperature/energy for an (accelerated) diffusion process within the interface leading to an oxidation of Ti using the oxygen from the substrate and thereby reducing the Nb‐O x and Ta‐O x bondings to within the substrate …”

Section: Resultsmentioning

confidence: 99%

“…However, 400 °C seems to be a critical activation temperature, because at this point a reduction of the substrate‐metal occurs parallel to an oxidation of Ti. This is assumed to be because of a beginning (accelerated) diffusion of the Ti atoms within the interface …”

Section: Discussionmentioning

confidence: 99%

Analysis of the thermal and temporal stability of Ta and Ti thin films onto SAW–substrate materials (LiNbO₃ and LiTaO₃) using AR‐XPS

Vogel

Gemming

Eckert

et al. 2016

Surface & Interface Analysis

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Modern surface‐acoustic‐wave devices are characterised by their trend to higher frequencies, power densities, and new applications. For this, a shrinking of the dimensions is necessary but hardly possible to achieve with standard Al‐based metallisation because of increased stress‐induced damaging (acoustomigration). In this context additional barrier interlayers between substrates and electrodes are necessary, especially for high‐temperature applications. For this, we present results of a detailed chemical interface analysis of deposited Ta and Ti thin‐film growth onto surface acoustic wave–substrate materials (LiNbO3 and LiTaO3) with respect to their interface layer structure and its temporal and thermal stability in vacuum. The analysis was mainly performed using non‐destructive and surface sensitive angle‐resolved X‐ray photoelectron spectroscopy. Besides a slight oxidation (oxygen adsorption) at the surface of these highly reactive metal thin films all interface sequences are stable up to 24 h. We also report higher thermal stability of Ta thin films up to 600 °C in contrast to Ti thin films (300 °C) because of presumed diffusion of Ti along grain boundaries. Copyright © 2016 John Wiley & Sons, Ltd.

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Comparative analysis of electronic structure of and surfaces

Cited by 20 publications

References 14 publications

DC-drift suppression of Ti: LiNbO3 waveguide chip by minimizing the contamination in oxide buffer layer

DC-drift suppression of Ti: LiNbO3 waveguide chip by minimizing the contamination in oxide buffer layer

Bifunctional Surface Coating of LiNbO₃ on High-Ni Layered Cathode Materials for Lithium-Ion Batteries

Analysis of the thermal and temporal stability of Ta and Ti thin films onto SAW–substrate materials (LiNbO₃ and LiTaO₃) using AR‐XPS

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Comparative analysis of electronic structure of and surfaces

Cited by 20 publications

References 14 publications

DC-drift suppression of Ti: LiNbO3 waveguide chip by minimizing the contamination in oxide buffer layer

DC-drift suppression of Ti: LiNbO3 waveguide chip by minimizing the contamination in oxide buffer layer

Bifunctional Surface Coating of LiNbO3 on High-Ni Layered Cathode Materials for Lithium-Ion Batteries

Analysis of the thermal and temporal stability of Ta and Ti thin films onto SAW–substrate materials (LiNbO3 and LiTaO3) using AR‐XPS

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Product

Resources

About

Bifunctional Surface Coating of LiNbO₃ on High-Ni Layered Cathode Materials for Lithium-Ion Batteries

Analysis of the thermal and temporal stability of Ta and Ti thin films onto SAW–substrate materials (LiNbO₃ and LiTaO₃) using AR‐XPS