Comparative analysis of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="normal">Nd</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>(4<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="italic">f</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msup></mml:mrow></mml:math>) energy levels

Gruber, John B.; Hills, Marian E.; Allik, Toomas H.; Jayasankar, C.K.; Quagliano, John R.; Richardson, F. S.

doi:10.1103/physrevb.41.7999

Cited by 86 publications

(28 citation statements)

References 46 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…splitting has been reported earlier for the 2 H 9/2 and 2 H 11/2 manifolds in various compounds (see e.g., refs. [16,17]) and discussed in terms of the two electron CF interaction [18]. However, of these two manifolds the latter was not observed experimentally and the former was reproduced quite The Trees parameters α, β, and γ were not varied freely but normally.…”

Section: Resultsmentioning

confidence: 90%

Crystal-field excitations in the visible spectrum of Nd2CuO4

Richard

Jandl

Hölsä

et al. 2004

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 90%

Crystal-field excitations in the visible spectrum of Nd2CuO4

Richard

Jandl

Hölsä

et al. 2004

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…5 [20,21]. The energy transfer mechanism in Nd,Cr:GSGG has been attributed to a dipole-dipole interaction between nearby Cr 3+ donor and Nd 3+ acceptor ions [18] as originally described by Dexter [19].…”

Section: Optical Characterizationmentioning

confidence: 96%

Production and characterization of Nd,Cr:GSGG thin films on Si(001) grown by pulsed laser ablation

Willmott

Manoravi

Holliday

2000

Applied Physics A: Materials Science & Processing

View full text Add to dashboard Cite

Nd,Cr:Gd 3 Sc 2 Ga 3 O 12 (GSGG) thin films have been produced for the first time. They were grown on Si(001) substrates at 650 • C by pulsed laser ablation at 248 nm of a crystalline Nd,Cr:GSGG target rod. The laser plume was analyzed using time-of-flight quadrupole mass spectroscopy, and consisted of elemental and metal oxide fragments with kinetic energies typically in the range 10 to 40 eV, though extending up to 100 eV. Although films deposited in vacuum using laser fluences of 0.8 ± 0.1 J cm −2 reproduced the Nd,Cr:GSGG bulk stoichiometry, those deposited using fluences above ≈ 3 J cm −2 resulted in noncongruent material transfer and were deficient in Ga and Cr. Attempts to grow films using synchronized oxygen or oxygen/argon pulses yielded mixed oxide phases. Under optimal growth conditions, the films were heteroepitaxial, with GSGG(001)[100] Si(001)[100], and exhibited VolmerWeber-type growth. Room-temperature emission spectra of the films suggest efficient non-radiative energy transfer between Cr 3+ and Nd 3+ ions, similar to that of the bulk crystal. PACS: 42.70.Hj; 78.66.Nk; 81.15.FgGadolinium scandium gallium garnet, Gd 3 Sc 2 Ga 3 O 12 (GSGG) doped with Nd and Cr has been shown to be an excellent solid-state lasing medium for high-efficiency Ndlasers [1, 2]. Nd 3+ ions in crystals have very narrow absorption linewidths and hence flashlamp pumping efficiency is poor. Nd 3+ can, however, be sensitized by also introducing Cr 3+ ions which absorb over a broad visible range and can rapidly transfer their energy by non-radiative processes to the Nd 3+ ions. GSGG offers the most efficient energy transfer from Cr 3+ to Nd 3+ ions of the various doublydoped garnet crystals investigated to date, due to its coactive crystal fields [3]. When flashlamp-pumped, the 1.06 µm 4 F 3/2 → 4 I 11/2 laser transition of Nd 3+ has been shown to be several times more efficient in Nd,Cr:GSGG than in the leading commercial host, Nd-doped yttrium aluminum garnet [3][4][5].There is an increasing interest in growing thin films of solid-state laser materials on semiconductor substrates, with a view to integrated semiconductor-optoelectronic applications such as active planar waveguides and optical masers [6,7], though this is the first report on the deposition of GSGG films. The thermal focusing effects observed in the bulk crystals, which limits the application of Nd,Cr:GSGG as a highpower lasing medium [8], is negligible in thin films because of their small thickness. The successful deposition of Nd,Cr:GSGG films on Si substrates by PLD could therefore lead to the development of microlasers with in situ semiconductor diode laser pumping [9]. Diode pumping has the advantage over flashlamp pumping that the Nd 3+ absorption line can be directly and efficiently pumped, thereby dispensing with the need to incorporate Cr 3+ ions.Pulsed laser deposition (PLD) is a technique uniquely suited to the deposition of multielemental thin films [10,11], because of its capacity to transfer material congruently from bulk to film in a single step....

show abstract

“…Splitting laser level of Nd3+ in YSAG and Fluorescence spectra of Nd:YSAG ceramics Since introducing Sc3+ into the Nd:YAG, which means that the surrounding of the optical center Nd3+ is modified, the energy level structure would be altered. By using a model Hamiltonian that assumes D2 site symmetry for the Nd3+ ions in the garnet lattice, John B. Gruber et al figured out the energy level of Nd:YSAG [31]. The splitting laser levels of Nd3+ in YSAG-4 F 3/2 and 4 I 11/2 -are shown in Figure. 29.…”

Section: Ceramics As the Disk Laser Media Dual -Wavelength Competitimentioning

confidence: 99%