Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests

Belaïd, Mohamed Ali; Ketata, K.; Gares, M.; Mourgues, K.; Masmoudi, Mohamed; Marcon, J.

doi:10.1016/j.microrel.2006.04.009

Cited by 2 publications

(1 citation statement)

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“…On the other hand, increasing the efficiency by harmonic manipulation typically implies conditions that may be harmful for the transistor reliability, in particular for the high electric fields induced by the peaks of the voltage waveforms [14], that have to be properly controlled to avoid any premature failure of the active devices [15]- [17].…”

Section: Introductionmentioning

confidence: 99%

Nonlinear-Embedding Design Methodology Oriented to LDMOS Power Amplifiers

Bosi

Raffo

Trevisan

et al. 2018

IEEE Trans. Power Electron.

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In this paper we apply for the first time the nonlinear-embedding technique to the design of power amplifiers based on laterally-diffused metal-oxide-semiconductor (LDMOS) field-effect transistors (FETs). Such a design technique is based on setting the transistor load line at the intrinsic current-generator plane, according to well-known theoretical guidelines. Then, the selected operating condition can be transposed at any design frequency at the extrinsic transistor terminals, by means of a model of the device nonidealities, such as the nonlinear intrinsic capacitances and the linear parasitic effects. A harmonicallytuned high-efficiency class-F and a wideband class-AB power amplifiers operating within the FM broadcasting band 88 ÷ 108 MHz based on a 10-W LDMOS are then designed and realized. To definitely assess the validity of the proposed approach for the LDMOS technology, we compare the measured performance on the fabricated power amplifiers with the expected predictions.

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Section: Introductionmentioning

confidence: 99%