Comparative analysis of thermally induced degradation of condensation-grown (100)Ge0.75Si0.25/SiO2 interfaces by electron spin resonance

Kepa, Jacek; Stesmans, André; Afanasʼev, Valeri

doi:10.1016/j.apsusc.2013.08.074

Cited by 4 publications

(3 citation statements)

References 34 publications

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“…A commonly observed downside of annealing such a structure is the inter-diffusion of oxygen from the (oxide) matrix towards the NCs' interface. This results in blunting and degradation of the interfaces, deteriorating the structure and/or forming insulating SiO 2 at the matrix/NCs interfaces [27,[30][31][32][33]. Thus, to preserve the functionality of incorporated Si-based electronics, a low processing temperature is required [27,32].…”

Section: Introductionmentioning

confidence: 99%

Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO₂ matrix

Sultan¹,

Guðmundsson²,

Manolescu³

et al. 2019

Nanotechnology

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SiGe nanoparticles dispersed in a dielectric matrix exhibit properties different from those of bulk and have shown great potential in devices for application in advanced optoelectronics. Annealing is a common fabrication step used to increase crystallinity and to form nanoparticles in such a system. A frequent downside of such annealing treatment is the formation of insulating SiO 2 layer at the matrix/SiGe interface, degrading the optical properties of the structure. An annealing process that could bypass this downside would therefore be of great interest. In this work, a short-time furnace annealing of a SiGe/TiO 2 system is applied to obtain SiGe nanoparticles without formation of the undesired SiO 2 layer between the dielectric matrix (TiO 2 ) and SiGe. The structures were prepared by depositing alternate layers of TiO 2 and SiGe films, using directcurrent magnetron sputtering technique. A wide range spectral response with a responsethreshold up to ∼1300 nm was obtained, accompanied with an increase in photo-response of more than two-orders of magnitude. Scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectroscopy and grazing incidence x-ray diffraction were used to analyze the morphological changes in respective structures. Photoconductive properties were studied by measuring photocurrent spectra using applied dc-voltages at various temperatures.

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Section: Introductionmentioning

confidence: 99%

Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO₂ matrix

Sultan¹,

Guðmundsson²,

Manolescu³

et al. 2019

Nanotechnology

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show abstract

“…Issues commonly observed with fabrication of such structures include inhomogeneity at the matrix/nanoparticle interfaces. Several studies have been devoted to the morphology of the interface between oxide matrices and nanocrystals 8,9,10 . The interface of such structure has been a matter of concern in studying optical response as it may give rise to dangling bonds acting as electrically active interface traps (known as Pb-type defects).…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of Si_1-xGe_x nanocrystals in as-grown and annealed structures: A comparative study

Sultan¹,

Teodorescu²,

Guðmundsson³

et al. 2019

Preprint

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Multilayer structure comprising of SiO2/SiGe/SiO2 were obtained by depositing SiO2 layers using reactive direct current magnetron sputtering (dcMS), whereas, Si and Ge were co-sputtered using dcMS and high impulse power magnetron sputtering (HiPIMS), respectively. The as-grown structures subsequently underwent rapid thermal annealing (550 – 900 °C for 1 min) in N2 ambient atmosphere. The structures were investigated using X-ray diffraction, high-resolution transmission electron microscopy along with photoconductive analysis, to explore structural changes and constituent properties. It is observed that the employment of HiPIMS facilitates the formation of SiGe nano-particles (~ 2.1 ± 0.8 nm) in the as-grown structure, and that presence of such nano-particles acts as a seed for heterogeneous nucleation, which upon annealing results in formation of periodically arranged columnar self-assembly of core-shell SiGe nanocrystals. Consequently an increase in photocurrent intensity by more than an order of magnitude was achieved by the annealing. Furthermore, a detailed discussion is provided on strain development within the structures, the consequent interface characteristics and its effect on the photocurrent spectra.

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“…Issues commonly observed with the fabrication of such structures include inhomogeneity at the matrix/nanoparticle (NCs/NPs) interfaces. Several studies have been devoted to the morphology of the interface between oxide matrices and NCs [8–10]. The interface of these structures has been a matter of concern in studying optical response as it may give rise to dangling bonds acting as electrically active interface traps (known as P b -type defects).…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of Si₁₋_xGe_x nanocrystals in as-grown and annealed structures: a comparative study

Sultan

Maraloiu

Stavarache

et al. 2019

Beilstein J. Nanotechnol.

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Multilayer structures comprising of SiO2/SiGe/SiO2 and containing SiGe nanoparticles were obtained by depositing SiO2 layers using reactive direct current magnetron sputtering (dcMS), whereas, Si and Ge were co-sputtered using dcMS and high-power impulse magnetron sputtering (HiPIMS). The as-grown structures subsequently underwent rapid thermal annealing (550–900 °C for 1 min) in N2 ambient atmosphere. The structures were investigated using X-ray diffraction, high-resolution transmission electron microscopy together with spectral photocurrent measurements, to explore structural changes and corresponding properties. It is observed that the employment of HiPIMS facilitates the formation of SiGe nanoparticles (2.1 ± 0.8 nm) in the as-grown structure, and that presence of such nanoparticles acts as a seed for heterogeneous nucleation, which upon annealing results in the periodically arranged columnar self-assembly of SiGe core–shell nanocrystals. An increase in photocurrent intensity by more than an order of magnitude was achieved by annealing. Furthermore, a detailed discussion is provided on strain development within the structures, the consequential interface characteristics and its effect on the photocurrent spectra.

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Comparative analysis of thermally induced degradation of condensation-grown (100)Ge0.75Si0.25/SiO2 interfaces by electron spin resonance

Cited by 4 publications

References 34 publications

Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO₂ matrix

Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO₂ matrix

Fabrication and characterization of Si_1-xGe_x nanocrystals in as-grown and annealed structures: A comparative study

Fabrication and characterization of Si₁₋_xGe_x nanocrystals in as-grown and annealed structures: a comparative study

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Comparative analysis of thermally induced degradation of condensation-grown (100)Ge0.75Si0.25/SiO2 interfaces by electron spin resonance

Cited by 4 publications

References 34 publications

Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO2 matrix

Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO2 matrix

Fabrication and characterization of Si1-xGex nanocrystals in as-grown and annealed structures: A comparative study

Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures: a comparative study

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Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO₂ matrix

Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO₂ matrix

Fabrication and characterization of Si_1-xGe_x nanocrystals in as-grown and annealed structures: A comparative study

Fabrication and characterization of Si₁₋_xGe_x nanocrystals in as-grown and annealed structures: a comparative study