Materials Science in Semiconductor Processing
 2024
DOI: 10.1016/j.mssp.2024.108665
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Comparative analysis on negative-bias-illumination-stress instabilities between planar- and vertical-channel thin-film transistors using InGaZnO active channels prepared by atomic-layer deposition

Ji-Won Kang,
Dong-Hee Lee,
Young-Ha Kwon
et al.
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