Organic photoresist coatings, primarily composed of resins,
are
commonly used in the electronics industry to protect inorganic underlayers.
Conventional photoresist strippers, such as amine-type agents, have
shown high removal performance but led to environmental impact and
substrate corrosiveness. Therefore, this trade-off must be addressed.
In this study, we characterized the removal mechanism of a photoresist
film using a nonionic triblock Pluronic surfactant [poly(ethylene
oxide)–poly(propylene oxide)–poly(ethylene oxide)] in
a ternary mixture of ethylene carbonate (EC), propylene carbonate
(PC), and water. In particular, the removal dynamics determined by
using a quartz crystal microbalance with dissipation monitoring was
compared with those determined by performing confocal laser scanning
microscopy and visual observation to analyze the morphology, adsorption
mass, and viscoelasticity of the photoresist film. In the absence
of the Pluronic surfactant, the photoresist film in the ternary solvent
exhibited a three-step process: (i) film swelling caused by the penetration
of a good solvent (EC and PC), (ii) formation of photoresist particles
through dewetting, and (iii) particle aggregation on the substrate.
This result was correlated to the Hansen solubility parameters. The
addition of the Pluronic surfactant not only prevented photoresist
aggregation in the third step but also promoted desorption from the
substrate. This effect was dependent on the concentration of the Pluronic
surfactant, which influenced diffusion to the interface between the
photoresist and the bulk solution. Finally, we proposed a novel photoresist
stripping mechanism based on the synergy between dewetting driven
by an EC/PC-to-water mixture and adsorption by the Pluronic surfactant.