Comparative electron diffraction study of the diamond nucleation layer on Ir(001)

Abstract

Comparative electron diffraction study of the diamond nucleation layer on Ir (001) Gsell, S; Berner, S; Brugger, T; Schreck, M; Brescia, R; Fischer, M; Greber, T; Osterwalder, J; Stritzker, BGsell, S; Berner, S; Brugger, T; Schreck, M; Brescia, R; Fischer, M; Greber, T; Osterwalder, J; Stritzker, B (2008 Comparative electron diffraction study of the diamond nucleation layer on Ir(001) AbstractThe carbon layer formed during the bias enhanced nucleation (BEN) procedure on iridium has been studied by different electron diffraction techniques. In reflection high energy electron diffraction (RHEED) and low energy electron diffraction (LEED) the carbon nucleation layer does not give any indication of crystalline diamond even if the presence of domains proves successful nucleation. In contrast, X-ray photoelectron diffraction (XPD) shows a clear C 1s pattern when domains are present after BEN. The anisotropy in the Ir XPD patterns is reduced after BEN while the fine structure is essentially identical compared to a single crystal Ir film. The change in the Ir XPD patterns after BEN can be explained by the carbon layer on top of a crystallographically unmodified Ir film. The loss and change in the fine structure of the C 1s patterns as compared to a single crystal diamond film are discussed in terms of mosaicity and a defective structure of the ordered fraction within the carbon layer.The present results suggest that the real structure of the BEN layer is more complex than a pure composition of small but perfect diamond crystallites embedded in an amorphous matrix. The carbon layer formed during the bias enhanced nucleation (BEN) procedure on iridium has been studied by different electron diffraction techniques. In reflection high energy electron diffraction (RHEED) and low energy electron diffraction terms of mosaicity and a defective structure of the ordered fraction within the carbon layer. The present results suggest that the real structure of the BEN layer is more complex than a pure composition of small but perfect diamond crystallites embedded in an amorphous matrix.

The synthesis of diamond films on adamantane-coated Si substrate at low temperature

“…The part of the oxygen signal at 532.7 eV is associated with oxide formation with Si surface during the thermal reaction. The oxygen peak at 532.7 eV attributed to the O-Si bond in SiO 2 [10,11]. We also observed the Auger peak at about 745 eV in XPS spectrum.…”

“…The exceptional physical and chemical properties of diamond such as wide band gap, chemical inertness, high carrier mobility, excellent biological compatibility, high propagation speed of acoustic wave, good optical transparency, high thermal conductivity and the greatest hardness that make its use advantageous in a wide range of applications [5][6][7]. Several methods have been proposed for the synthesis of high crystalline diamond films by microwave plasma chemical vapor deposition (MPCVD) at high temperature and pressure [7][8][9][10][11][12][13]. However, to make commercially viable further investigations are still required in terms of yield, quality and uniformity of diamond.…”

Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers

“…Figure 1 summarizes the dominant phenomenological features of the nucleation layer formed by BEN on iridium as revealed in numerous former studies111213. The first is the appearance of bright areas in scanning electron microscopy (SEM) images taken by the in-lens (IL) detector which is specifically sensitive to work function contrast.…”

Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition

“…The part of the oxygen signal at 532.7 eV attributed to the O-Si bond in SiO 2 . 39,40 The weak signals of silicon Si 2p and Si 2s at 99 and 151 eV, indicates that the most of silicon surface is covered by diamond films. 41 On the basis of XPS results, we confirm the existence of diamond as well as SiC.…”