Comparative mass spectrometric study of AIII-BV compounds covered with a gold layer

Veresegyházy, R.; Mojzes, I.; Pécz, B.

doi:10.1016/0042-207x(86)90245-9

Cited by 11 publications

(6 citation statements)

References 9 publications

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“…The holes are formed as a result of interaction between Au colloid nanoparticle and InAs substrate to form Au-In alloy accompanied by the evaporation of arsenic [24][25][26]. Although thermal decomposition of InAs substrate is reported to occur in the case of substrates coated with Au film [26] and depends on the Au film thickness [27], no holes were found on a substrate with 0.5 nm thick Au film subjected to identical annealing step as illustrated in figure 3(c). However, in some particular cases of different Au film thicknesses and annealing parameters, such holes can also be formed on InAs substrates coated with Au film and lead to a broader and asymmetric LDs.…”

Section: Au-catalyzed Casementioning

confidence: 99%

Length distributions of Au-catalyzed and In-catalyzed InAs nanowires

Дубровский¹,

Sibirev²,

Berdnikov³

et al. 2016

Nanotechnology

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We present experimental data on the length distributions of InAs nanowires grown by chemical beam epitaxy with Au catalyst nanoparticles obtained by thermal dewetting of Au film, Au colloidal nanoparticles and In droplets. Poissonian length distributions are observed in the first case. Au colloidal nanoparticles produce broader and asymmetric length distributions of InAs nanowires. However, the distributions can be strongly narrowed by removing the high temperature annealing step. The length distributions for the In-catalyzed growth are instead very broad. We develop a generic model that is capable of describing the observed behaviors by accounting for both the incubation time for nanowire growth and secondary nucleation of In droplets. These results allow us to formulate some general recipes for obtaining more uniform length distributions of III-V nanowires.

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Section: Au-catalyzed Casementioning

confidence: 99%

Length distributions of Au-catalyzed and In-catalyzed InAs nanowires

Дубровский¹,

Sibirev²,

Berdnikov³

et al. 2016

Nanotechnology

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show abstract

“…Veresegyhazy et al also observed, for all four III±V semiconductors studied in this work, that the Au-catalyzed decomposition of these compounds occurred at lower temperatures with decreasing Au film thickness. [41] They noted significant differences in the decomposition behavior of the semiconductors for Au films 50 and 15 nm thick. For In-based materials, we observed decomposition of nanowire trunks when heated to high temperatures; however there was less destruction of the substrate during growth of the trunks themselves.…”

Section: General Trendsmentioning

confidence: 99%

“…To our knowledge, there are no in-depth studies of the compounds formed when InAs is heated in contact with Au, but the As x gas evolved during the heating of Au films on InAs has been measured. [40,41] The formation of a pink-colored Au±In alloy was observed around 380 C; this should be b or e,e¢ phase or a combination thereof. The compound changed abruptly from pink to silver at 430 C, [40] accompanied by evolution of a large amount of As x ; based on InP results we assume this new compound to be c,c¢, which is silver in color.…”

Section: Au Interaction With Inp and Inasmentioning

confidence: 99%

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A New Understanding of Au‐Assisted Growth of III–V Semiconductor Nanowires

Dick

Deppert

Karlsson

et al. 2005

Adv Funct Materials

142

150

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Semiconductor nanowires of III–V materials have generated much interest in recent years. However, the growth mechanisms by which these structures form are not well understood. The so‐called vapor–liquid–solid (VLS) mechanism has often been proposed for III–V systems, with a chemically inert, liquid metal particle (typically Au) acting as a physical catalyst. We assert here that Au is, in fact, not inert with respect to the semiconductor material but rather interacts with it to form a variety of intermetallic compounds. Moreover, we suggest that III–V nanowire growth can best be understood if the metallic particle is not a liquid, but a solid‐phase solution or compound containing Au and the group III material. The four materials GaP, GaAs, InP, and InAs will be considered, and growth behavior related to their particular temperature‐dependent interaction with Au.

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“…The GaAs nanowires investigated in this work were grown by molecular beam epitaxy (MBE) on Mg-doped (nominal concentration of 1.1 × 10 19 cm –3 ) GaAs-ZB(111) substrates. − The samples were synthesized using a Riber 2300 R&D MBE system through the vapor–liquid–solid (VLS) growth mechanism. , Au colloidal nanoparticles (with an average size of 5 nm diameter), which act as a catalyst in the growth process, were deposited on the GaAs substrate using the drop-coating method. The substrate was then heated to 610 °C in the MBE growth chamber to remove the superficial oxide layer.…”

Section: Resultsmentioning

confidence: 99%

Mg-Doped GaAs Nanowires with Enhanced Surface Alloying for Use as Ohmic Contacts in Nanoelectronic Devices

Chagas

Ribeiro

Rosa

et al. 2021

ACS Appl. Nano Mater.

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In this work, we have investigated the structural and electronic properties of Mg-doped GaAs(111) nanowires synthesized through a vapor−liquid−solid growth mechanism. The crystalline structure of these nanowires was measured using synchrotron X-ray diffraction, while their electronic structure was addressed by scanning tunneling spectroscopy. Scanning tunneling microscopy measurements revealed that conducting Ga 2 Mg/Mg clusters are observed at {110} nanowire lateral surfaces, allowing electrical contacts with reduced Schottky barriers. This suggests that similar alloyed surfaces can be produced with other dopants, enabling the development of distinct Ohmic contacts in these systems. Density functional theory was used to investigate the electronic response of Ga 2 Mg. While at room temperature, electronic variable-range hopping drives the nanowires into a metallic behavior, quantum confinement is observed at low temperatures.

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Comparative mass spectrometric study of AIII-BV compounds covered with a gold layer

Cited by 11 publications

References 9 publications

Length distributions of Au-catalyzed and In-catalyzed InAs nanowires

Length distributions of Au-catalyzed and In-catalyzed InAs nanowires

A New Understanding of Au‐Assisted Growth of III–V Semiconductor Nanowires

Mg-Doped GaAs Nanowires with Enhanced Surface Alloying for Use as Ohmic Contacts in Nanoelectronic Devices

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