Comparative modeling of vertical and planar organic phototransistors with 2D drift-diffusion simulations

Abstract

Vertical Organic Transistors and Phototransistors have been proven to be promising technologies due to the advantages of reduced channel length and larger sensitive area with respect to planar devices. Nevertheless, a real improvement of their performance is subordinate to the quantitative description of their operation mechanisms. In this work, we present a comparative study on the modeling of vertical and planar Organic Phototransistor (OPT) structures. Computer-based simulations of the devices have been carried out with Synopsys Sentaurus TCAD in a 2D Drift-Diffusion framework. The photoactive semiconductor material has been modeled using the virtual semiconductor approach as the archetypal P3HT:PC61BM bulk heterojunction. It has been found that both simulated devices have comparable electrical and optical characteristics, accordingly to recent experimental reports on the subject

Fused‐Ring Electron‐Acceptor Single Crystals with Chiral 2D Supramolecular Organization for Anisotropic Chiral Optoelectronic Devices

“…To investigate the inversion, anisotropy, and amplification of current dissymmetry compared to optical dissymmetry, we established an optical model combined with an electrical model via the finite element method in COMSOL multiphysics, [50][51][52][53][54] see the Supporting Information for simulation details. The electron concentration distribution clearly shows the charge flows occur predominantly in the few monolayers of the crystal adjacent to the dielectric interface (Figure 4g).…”