Comparative performance evaluation of temperature dependent characteristics and power converter using GaN, SiC and Si power devices

Shah, Faisal Mehmood; Xiao, Han; Li, Rui; Awais, Muhammad; Zhou, Guangyang; Bitew, Girmaw Teshager

doi:10.1109/cpe.2018.8372523

Cited by 40 publications

(21 citation statements)

References 19 publications

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“…For the same current, SiC MOSFETs need a higher gate voltage compared to the gate voltage of GaN devices [24], [25]. The high breakdown electric field of GaN as well as its high electron mobility permits switching at frequencies about 30 times that of Si-based devices, showing benefits in high frequency applications such as EVs and PHEVs [26], [27]. The superior switching performance of GaN is due to the extremely low input, output and miller capacitance of the e-GaN HEMTs [8].…”

Section: A Device Comparisonmentioning

confidence: 99%

Current Status and Future Trends of GaN HEMTs in Electrified Transportation

et al. 2020

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Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency, higher power density, and smaller passive components resulting in lighter, smaller and more efficient electrical systems as opposed to conventional Silicon (Si) based devices. This paper investigates the detailed benefits of using GaN devices in transportation electrification applications. The material properties of GaN including the applications of GaN HEMTs at different switch ratings are presented. The challenges currently facing the transportation industry are introduced and possible solutions are presented. A detailed review of the use of GaN in the Electric Vehicle (EV) powertrain is discussed. The implementation of GaN devices in aircraft, ships, rail vehicles and heavy-duty vehicles is briefly covered. Future trends of GaN devices in terms of cost, voltage level, gate driver design, thermal management and packaging are investigated.INDEX TERMS Electric vehicle, gallium nitride, high electron mobility transistor, hybrid electric vehicle, wide bandgap devices.

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Section: A Device Comparisonmentioning

confidence: 99%

Current Status and Future Trends of GaN HEMTs in Electrified Transportation

et al. 2020

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“…This topology increases the power density while also integrating gate controller, which allows extremely high switching speeds to be achieved by reduction of parasitic capacitances and inductances (Amano et al 2018). They outperform other high voltage transistor topologies due to significantly lower drain-source resistance (Alharbi et al 2017;Roig et al 2017;Shah et al 2018). However, the maximum drain-source voltage of GaN FET transistors is up to 600 V, and the series connection of the transistors for high voltage stress distribution is complicated by the low internal capacity of these transistors (Roig et al 2017).…”

Section: Overview Of the Principle And Problems Of Pockels Cellsmentioning

confidence: 99%

Pjezoelektrinių virpesių slopinimo pokelso narveliuose tyrimas

Sinkevičius¹

2021

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Vilnius, 2021 Disertacija rengta 2017-2021 metais Valstybiniame mokslinių tyrimų institute Fizinių ir technologijos mokslų centre. Vadovas prof. dr. Algirdas BAŠKYS (Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras, elektros ir elektronikos inžinerija -T 001). Vilniaus Gedimino technikos universiteto elektros ir elektronikos inžinerijos mokslo krypties disertacijos gynimo taryba: Pirmininkas prof. dr. Dalius NAVAKAUSKAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija -T 001). Nariai: doc. dr. Aidas MATIJOŠIUS (Vilniaus universitetas, fizika -N 002), prof. dr. Jurij NOVICKIJ (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija -T 001), dr. Iouliia SKLIAROVA (Aveiro universitetas, Portugalija, elektros ir elektronikos inžinerija -T 001), prof. dr. Algirdas SUŽIEDĖLIS (Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras, fizika -N 002). Disertacija bus ginama viešame Elektros ir elektronikos mokslo krypties disertacijos gynimo tarybos posėdyje 2021 m. lapkričio 9 d. 10 val. Vilniaus Gedimino technikos universiteto senato posėdžių salėje.

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“…To determine the effect of the overlap, an initial simulation study is developed under the following considerations: (1) time delay proposed between the turn on of M 1 and M 2 is 0.49, this value was taken because T D must be as close as 0.5, with the aim of not having such a long overlap; (2) a quality factor of the resonant tank is sufficiently high to filter all the current harmonics, except the fundamental; (3) all inductors and capacitors are lossless; (4) D 3 , D 4 , D 5 , and D 6 are ideal diodes; and (5) unidirectional switches were performed by SiC diodes (C4D08120) and SiC MOSFETs (C2M0160120D), because of their improvements for AC-DC and DC-DC converters. These devices can operate with reduced conduction and switching losses over higher frequencies, and higher temperatures minimize the requirements for the passive components and reduce cooling demands [47][48][49]; however, the performance given by SiC power devices will be compared with Si and GaN. The switching frequency (F sw ) was considered to be 200 kHz.…”

Section: Overlap In Gate-signals Of M 1 and Mmentioning

confidence: 99%

Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices

et al. 2020

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This paper focuses on the main reasons of low efficiency in a current-fed DC-DC resonant converter applied to photovoltaic (PV) isolated systems, comparing the effects derived by the overlapping time in the gate-signals (gate-source voltage) combining silicon (Si), silicon carbide (SiC), and gallium nitride (GaN)-based power devices. The results show that unidirectional switches (metal–oxide–semiconductor field-effect transistors (MOSFETs) plus diode) present hard switching as a result of the diode preventing the MOSFET capacitance of being discharged. The effectiveness of the converter was verified with a 200-W prototype with an input voltage range of 0–30.3 V, an output voltage of 200 V, and a switching frequency of 200 kHz. The reduction losses by applying GaN versus Si and SiC technologies are 66.49% and 53.57%, respectively. Alternatively, by applying SiC versus Si devices the reduction loss is 27.84%. Finally, according to the results, 60% of losses were caused by the diodes on both switches.

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Comparative performance evaluation of temperature dependent characteristics and power converter using GaN, SiC and Si power devices

Cited by 40 publications

References 19 publications

Current Status and Future Trends of GaN HEMTs in Electrified Transportation

Current Status and Future Trends of GaN HEMTs in Electrified Transportation

Pjezoelektrinių virpesių slopinimo pokelso narveliuose tyrimas

Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices

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