2005
DOI: 10.1002/chin.200521221
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Comparative Structure and Optical Properties of Ga‐, In‐, and Sn‐Doped ZnO Nanowires Synthesized via Thermal Evaporation.

Abstract: Comparative Structure and Optical Properties of Ga-, In-, and Sn-Doped ZnO Nanowires Synthesized via Thermal Evaporation. -High-density undoped and Ga-, In-, and Sn-doped ZnO nanowires are prepared on Si substrates coated with Au nanoparticles via thermal evaporation at 500-1000°C. The samples are characterized by SEM, TEM, XPS, XRD, UV/VIS, photoluminescene, and catodoluminescence spectroscopy. The absorption and photoluminescence of Sn-doped ZnO nanowires shift to the lower energy region than those of In-and… Show more

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Cited by 5 publications
(6 citation statements)
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“…All of the spectra showed two emission bands located at 396 and 484 nm. While the sharper 396-nm emission band has typically been assigned to the near-band-edge emission in ZnO [18], the band in the visible spectral range (showing a peak at 484 nm) has been attributed to the recombination of photogenerated holes with singly ionized charge states of the intrinsic defects such as oxygen vacancies, Zn interstitials, or impurities [19][20][21][22].…”
Section: Photoluminescence Spectramentioning
confidence: 99%
“…All of the spectra showed two emission bands located at 396 and 484 nm. While the sharper 396-nm emission band has typically been assigned to the near-band-edge emission in ZnO [18], the band in the visible spectral range (showing a peak at 484 nm) has been attributed to the recombination of photogenerated holes with singly ionized charge states of the intrinsic defects such as oxygen vacancies, Zn interstitials, or impurities [19][20][21][22].…”
Section: Photoluminescence Spectramentioning
confidence: 99%
“…. A few works on the synthesis and characterization of ZnO nanostructures doped with different impurities like Al, Sn, Ga, In, Sb, Cu, etc are reported in literature . Li et al .…”
Section: Growth Of Different Zno Nanostructuresmentioning
confidence: 99%
“…Further, to improve the performance of nanostructures, ZnO‐based nanomaterials are doped or alloyed to modulate their electrical and optical properties for optoelectronic and nanoelectronic applications. Recently, many elements such as Al, Mg, Co, Ni, Ga, In Sn, S,and Cu have been doped or alloyed into ZnO and demonstrated tunable properties.…”
Section: Introductionmentioning
confidence: 99%
“…ZnO was frequently doped with group III, IV, V and VI elements (e.g. Al, Ga, In, Mn and Ni) [7,8]. The rare earth (RE, e.g.…”
Section: Introductionmentioning
confidence: 99%