Comparative studies of p-type InP layers formed by Zn3As2 and Zn3P2 diffusion

Feng, Shiwei; Hu, Jun; Lu, Yicheng; Yakshinskiy, B. V.; Wynn, J. D.; Ghosh, Chuni

doi:10.1007/s11664-003-0225-9

Cited by 6 publications

(3 citation statements)

References 8 publications

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“…There were several methods to realize selective‐area zinc diffusion in InP layers, mainly including chamber diffusion by metal‐organic chemical vapor deposition (MOCVD) using dimethylzinc (DMZn) or diethylzinc (DEZn) as the p‐type dopant [ 10,11 ] and furnace diffusion with ZnP 2 or Zn 3 P 2 in a sealed or semiclosed or open quartz ampoule. [ 12–14 ] The former has the disadvantages of high cost and risk of chamber pollution after external patterned processing for diffusion. The latter has the disadvantages of poor lateral uniformity, poor reproducibility, and limited wafer size.…”

Section: Introductionmentioning

confidence: 99%

Optimized Selective‐Area p‐Type Diffusion for the Back‐Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process

Chen

Zhang

Miao

et al. 2021

Physica Status Solidi (a)

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Herein, an alternative approach of selective‐area zinc diffusion technique by single rapid thermal diffusion (RTD) using a Zn3P2/Zn/SiO2 multilayer structure is proposed to realize p‐type doping in the InP cap so as to fabricate planar InGaAs/InP avalanche photodiodes (APDs). Through the optimization of selective‐area zinc diffusion in the InP cap, a low dark current, high responsivity, fast transient response, and high reliability near‐infrared back‐illuminated planar InGaAs/InP APD is obtained, which demonstrates a simple and efficient method for the development of high‐performance planar InGaAs/InP APD focal plane arrays.

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Section: Introductionmentioning

confidence: 99%

Optimized Selective‐Area p‐Type Diffusion for the Back‐Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process

Chen

Zhang

Miao

et al. 2021

Physica Status Solidi (a)

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“…There are several methods to drive p-type dopant into InP/InGaAs heterostructure by selective-area diffusion, such as the furnace diffusion and chamber diffusion. The furnace diffusion is done in the sealed or semi-closed ampoule by evaporated zinc phosphide (Zn 3 P 2 ) and/or zinc arsenide (Zn 3 As 2 ) sources [4]. The furnace diffusion has some disadvantages, such as the lack of lateral uniformity, poor reproducibility, and restriction of wafer size.…”

Section: Introductionmentioning

confidence: 99%

Large-Area Planar InGaAs p-i-n Photodiodes With Mg Driven-in by Rapid Thermal Diffusion

Huang

Lee

2014

IEEE Electron Device Lett.

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Conventional InP/InGaAs/InP heterostructure p-i-n photodiodes (PIN-PDs) are usually fabricated by postgrowth Zn diffusion to form the p-type region. In this letter, we propose a novel method to fabricate the high performance of largearea planar InP/InGaAs/InP PIN-PDs with Mg driven-in process. The Mg driven-in is implemented by spin-on dopant technique using magnesium-silica-film (MgSiO x ) source and through the rapid thermal diffusion. The preparation of MgSiO x source carrier as the p-type dopant for InP/InGaAs heterostructure is more time-saving than that of zinc-phosphorous-dopant-coating because the latter needs an additional step of oxygen (O 2 ) plasma to remove a thick resin layer. To improve the responsivity of vertically illuminated PDs, Si/Al 2 O 3 bilayers are deposited as the antireflective coating. The 800-µm-diameter PD with Mg driven-in exhibits a low dark current of 20 pA (or 4 nA/cm 2 ) at −10 mV, a high responsivity of 1.14 A/W at 1550-nm wavelength, an excellent quantum efficiency of 91%, and a good uniformity in the light received area. These characteristics are comparable to those of the PD with Zn driven-in. Index Terms-p-i-n photodiodes (PIN-PDs), rapid thermal diffusion (RTD), spin-on-dopant (SOD), magnesium-silicafilm (MgSiO x ).

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“…6 The electron mobility is given in Fig. 17͒ and InP, 18 respectively ͑for ternary compositions a linear interpolation can be used͒. 17͒ and InP, 18 respectively ͑for ternary compositions a linear interpolation can be used͒.…”

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confidence: 99%

Terahertz emission mechanisms in InAsxP1−x

Lockhart

Dutta

Han

et al. 2008

Applied Physics Letters

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The terahertz emission mechanisms from the surface of bulk InAs x P 1−x crystals have been examined. The dominant terahertz emission mechanism from InAs x P 1−x for low-fluence optical excitation is the photo-Dember effect for As compositions of 78% and greater while the surface field effect is dominant for As compositions of 50% and lower for the measured transport properties. The observed terahertz emission magnitude from the photo-Dember effect increased with As composition due to decreasing absorption depth. The observed terahertz emission magnitude from the surface field effect decreased with increasing As composition and was lower than modeled values due to the lower high-field mobility in the depletion region in those samples.

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Comparative studies of p-type InP layers formed by Zn3As2 and Zn3P2 diffusion

Abstract: Comparative Studies of p-Type InP Layers Formed by Zn 3 As 2 and Zn 3 P 2 Diffusion 933

Cited by 6 publications

References 8 publications

Optimized Selective‐Area p‐Type Diffusion for the Back‐Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process

Optimized Selective‐Area p‐Type Diffusion for the Back‐Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process

Large-Area Planar InGaAs p-i-n Photodiodes With Mg Driven-in by Rapid Thermal Diffusion

Terahertz emission mechanisms in InAsxP1−x

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