Comparative study of circuit perspectives for multi-gate structures at sub-10nm node

Lacord, J.; Huguenin, J.-L.; Monfray, S.; Coquand, R.; Skotnicki, T.; Ghibaudo, G.; Bœuf, F.

doi:10.1016/j.sse.2012.04.007

Cited by 4 publications

(1 citation statement)

References 15 publications

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“…However, the C gs is least contributor over C gd in TFETs; therefore the maximum contribution for C gg is achieved from C gd as depicted in Fig. 12b [50].…”

Section: G Ac and Rf Characteristicsmentioning

confidence: 98%

Influence of Fringing-Field on DC/AC Characteristics of Si₁₋ₓGeₓ Based Multi-Channel Tunnel FETs

Thoti

2020

IEEE Access

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Tunnel field-effect transistors (TFETs) are the decent performance estimators in the prospective of short-channel effects. In such structures, a small inter-gate separation (IGS) is a key factor that appraises for high packed-density with more number of channels (N ) to deliver superior performance. Hence, the investigation is majorly focused on scaling IGS and its fringing-field impact on device behavior for the first time. The outcomes reveal that the high fringing-field initiates for IGS < 10 nm and influences the tunneling probability and scattering strongly at 1-nm IGS, which affect the DC and RF characteristics; hence, optimized values of IGS are investigated and determined as IGS > 10 nm. The results state that the optimized IGS can provide source to deliver high ratio of on-and off-current (I on /I off ). Even though, a small IGS is beneficial for reduction in the total capacitance, the RF performance improvement depends on a large IGS. The investigation is further extended and quantified for the finest IGS in multi-channel TFETs when N varies from 1 to 10. These analyses are assessed for the emerging technological nodes.INDEX TERMS Band-to-band tunneling model, channel number (N ), fringing-field, inter-gate separation, multi-channel tunnel-field effect transistor, Si 1−x Ge x .

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“…However, the C gs is least contributor over C gd in TFETs; therefore the maximum contribution for C gg is achieved from C gd as depicted in Fig. 12b [50].…”

Section: G Ac and Rf Characteristicsmentioning

confidence: 98%

Influence of Fringing-Field on DC/AC Characteristics of Si₁₋ₓGeₓ Based Multi-Channel Tunnel FETs

Thoti

2020

IEEE Access

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Effects of Fin Height on Digital Performance of Hybrid p-Si/n-InGaAs C-FinFETs at 25 nm Gate Length

Banerjee

Biswas

2020

Lecture Notes in Electrical Engineering

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Analysis and Mitigation of Negative Differential Resistance effects in Double-Gate Silicon-on-Insulator Negative Capacitance Field Effect Transistor with improved analog performance

Pratap

Kansal

Medury

2023

Microelectronics Journal

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Comparative study of circuit perspectives for multi-gate structures at sub-10nm node

Cited by 4 publications

References 15 publications

Influence of Fringing-Field on DC/AC Characteristics of Si₁₋ₓGeₓ Based Multi-Channel Tunnel FETs

Influence of Fringing-Field on DC/AC Characteristics of Si₁₋ₓGeₓ Based Multi-Channel Tunnel FETs

Effects of Fin Height on Digital Performance of Hybrid p-Si/n-InGaAs C-FinFETs at 25 nm Gate Length

Analysis and Mitigation of Negative Differential Resistance effects in Double-Gate Silicon-on-Insulator Negative Capacitance Field Effect Transistor with improved analog performance

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