Comparative study of dielectric coating materials for micro-cavity applications

Sidqi, Najwa; Clark, Caspar; Buller, Gerald S.; Thalluri, Gopala Krishna V. V.; Mitrofanov, Jevgenij; Noblet, Yoann

doi:10.1364/ome.9.003452

Cited by 13 publications

(6 citation statements)

References 59 publications

(63 reference statements)

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“…The "k" curve for the ZrO 2 increases with decreasing wavelength, which is more typical of defect-induced (Urbach) absorption in dielectric films and is comparable with those reported in Ref. [40]. indicating that the HfO 2 -based and ZrO 2 -based CMOS inverters have excellent electrical transfer characteristics and both pFET and nFET in the CMOS inverters functioned very well.…”

Section: Methodssupporting

confidence: 84%

Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

2020

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We report the growth of nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using the HfO2 and ZrO2 thin films as the gate oxide. Tetrakis (dimethylamino) hafnium (Hf[N(CH3)2]4) and tetrakis (dimethylamino) zirconium (IV) (Zr[N(CH3)2]4) were used as the precursors, while O2 gas was used as the reactive gas. The PE-ALD-grown HfO2 and ZrO2 thin films were analyzed using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM). The XPS measurements show that the ZrO2 film has the atomic concentrations of 34% Zr, 2% C, and 64% O while the HfO2 film has the atomic concentrations of 29% Hf, 11% C, and 60% O. The HRTEM and XRD measurements show both HfO2 and ZrO2 films have polycrystalline structures. n-channel and p-channel metal-oxide semiconductor field-effect transistors (nFETs and pFETs), CMOS inverters, and CMOS ring oscillators were fabricated to test the quality of the HfO2 and ZrO2 thin films as the gate oxide. Current-voltage (IV) curves, transfer characteristics, and oscillation waveforms were measured from the fabricated transistors, inverters, and oscillators, respectively. The experimental results measured from the HfO2 and ZrO2 thin films were compared.

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Section: Methodssupporting

confidence: 84%

Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

2020

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“…The low electrical conductivity is the reason that the charge accumulates in the beam-irradiated area of the dielectric surface, which in the end can lead to beam deceleration, defocusing, and even reflection from the surface. The problem of the electronbeam charging of a non-conductive surface can be partially solved by placing metal grids on the irradiated surface [96], or by admixing metals to the dielectric target to improve its electrical conductivity [97], or by introducing an auxiliary ion beam to offset the surface charge carried to the dielectric target by the electron beam [98]. Thus, conventional electronbeam processing of dielectrics requires undertaking special measures to increase the charge drainage from the surface or to prevent its accumulation.…”

Section: Electron-beam Methodsmentioning

confidence: 99%

Electron-Beam Synthesis of Dielectric Coatings Using Forevacuum Plasma Electron Sources (Review)

et al. 2022

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This is a review of current developments in the field of ion-plasma and beam methods of synthesis of protective and functional dielectric coatings. We give rationales for attractiveness and prospects of creating such coatings by electron-beam heating and following evaporation of dielectric targets. Forevacuum plasma electron sources, operating at elevated pressure values from units to hundreds of pascals, make it possible to exert the direct action of an electron beam on low-conductive materials. Electron-beam evaporation of aluminum oxide, boron, and silicon carbide targets is used to exemplify the particular features of electron-beam synthesis of such coatings and their parameters and characteristics.

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“…When compared to other PVD processes, E-beam evaporation has a high material use efficacy, lowering the manufacturing cost. Various high-quality thin films such as stainless steel [42], copper [49], silicon [50], silicon nitride [51], and many more [52][53][54][55] have been deposited via the E-beam deposition method.…”

Section: A Vacuummentioning

confidence: 99%

“…compared to other PVD processes, E-beam evaporation has a high material use efficacy, lowering the manufacturing cost. Various high-quality thin films such as stainless steel [42], copper [49], silicon [50], silicon nitride [51], and many more [52][53][54][55] have been deposited via the E-beam deposition method. Another physical deposition method for the thin-film-coating system is pulsed-laser deposition (PLD), in which the laser beam is used to ablate the target material for depositing thin films in a vacuum chamber [56].…”

Section: A Vacuummentioning

confidence: 99%

Optical Thin Films Fabrication Techniques—Towards a Low-Cost Solution for the Integrated Photonic Platform: A Review of the Current Status

et al. 2022

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In the past few decades, several methods concerning optical thin films have been established to facilitate the development of integrated optics. This paper provides a brief depiction of different techniques for implementing optical waveguide thin films that involve chemical, physical, and refractive index modification methods. Recent advances in these fabrication methods are also been presented. Most of the methods developed for the realization of the thin-films are quite efficient, but they are expensive and require sophisticated equipment. The major interest of the scientists is to develop simple and cost-effective methods for mass production of optical thin films resulting in the effective commercialization of the waveguide technology. Our research group is focused on developing a silica-titania optical waveguide platform via the sol-gel dip-coating method and implementing active and passive optical elements via the wet etching method. We are also exploring the possibility of using nanoimprint lithography (NIL) for patterning these films so that the fabrication process is efficient and economical. The recent developments of this platform are discussed. We believe that silica-titania waveguide technology developed via the sol-gel dip-coating method is highly attractive and economical, such that it can be commercialized for applications such as sensing and optical interconnects.

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Comparative study of dielectric coating materials for micro-cavity applications

Cited by 13 publications

References 59 publications

Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

Electron-Beam Synthesis of Dielectric Coatings Using Forevacuum Plasma Electron Sources (Review)

Optical Thin Films Fabrication Techniques—Towards a Low-Cost Solution for the Integrated Photonic Platform: A Review of the Current Status

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