2022
DOI: 10.1016/j.jallcom.2021.163501
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Comparative study of electrochemically-grown vanadium pentoxide nanostructures synthesized using differential pulse voltammetry, cyclic voltammetry, and chronoamperometry methods as the hole transport layer

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Cited by 5 publications
(19 citation statements)
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“…Based on the illustrated image in Figure b″, the thickness of LNO in LNO-TF/ED-T2 was estimated to be approximately 325 nm. However, a higher thickness of 750 nm was observed for LNO-TF/ED-T4, which exceeds the acceptable thickness for CTLs in PSCs (see Figure c″). , …”
Section: Resultsmentioning
confidence: 99%
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“…Based on the illustrated image in Figure b″, the thickness of LNO in LNO-TF/ED-T2 was estimated to be approximately 325 nm. However, a higher thickness of 750 nm was observed for LNO-TF/ED-T4, which exceeds the acceptable thickness for CTLs in PSCs (see Figure c″). , …”
Section: Resultsmentioning
confidence: 99%
“…A smaller energy difference between these levels indicates a higher probability of hole transfer. The energy level proximity between the LNO and P3HT:PCBM layers increases the density of active sites for charge transfer and accelerates the rate at which holes can pass from the LNO to the P3HT:PCBM . Based on the energy level calculations provided in Table S5, it was determined that the E v level of LNO-TF/ED-V1 was approximately −5.13 eV.…”
Section: Resultsmentioning
confidence: 99%
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