Comparative study of GaN betavoltaic battery based on p-n junction and Schottky barrier diode

Zheng, Renzhou; Lu, Jingbin; Liu, Yumin; Li, Xiaohua; Xu, Xu; He, Rui; Tao, Zexin; Gao, Yu-Hang

doi:10.1016/j.radphyschem.2019.108595

Cited by 12 publications

(4 citation statements)

References 17 publications

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“…The energy spectrum of the 63 Ni source exhibited a wide range to a 66 keV peak energy [ 19 ]. We additionally confirmed the performances of the optimized diode depending on the injected electron energy.…”

Section: Resultsmentioning

confidence: 99%

“…These results revealed that the variations of the current of the irradiated diodes depending on the energy of the e-beam were large. The probability of beta particles generated from the 63 Ni source showed a high distribution below 20 keV [ 19 ]. Also, the depletion width formed in the i-GaN region was small at about 600 nm (in case of D i-GaN = 1 × 10 16 cm −3 ), and the diffusion length of GaN can be shortened by native defects.…”

Section: Resultsmentioning

confidence: 99%

“…Recent studies on BV cells aimed at enhancing the conversion efficiency. Many researchers have made progress in the optimization design of diode structures using a theoretical calculation model [ 19 , 20 ]. However, the design considerations of the GaN-based BV cells still have to be addressed due to the inherent properties of GaN material, including the various native trap states that occur during growth.…”

Section: Introductionmentioning

confidence: 99%

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Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

et al. 2020

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In this work, Gallium Nitride (GaN)-based p-i-n diodes were designed using a computer aided design (TCAD) simulator for realizing a betavoltaic (BV) cell with a high output power density (Pout). The short-circuit current density (JSC) and open-circuit voltage (VOC) of the 17 keV electron-beam (e-beam)-irradiated diode were evaluated with the variations of design parameters, such as the height and doping concentration of the intrinsic GaN region (Hi-GaN and Di-GaN), which influenced the depletion width in the i-GaN region. A high Hi-GaN and a low Di-GaN improved the Pout because of the enhancement of absorption and conversion efficiency. The device with the Hi-GaN of 700 nm and Di-GaN of 1 × 1016 cm−3 exhibited the highest Pout. In addition, the effects of native defects in the GaN material on the performances were investigated. While the reverse current characteristics were mainly unaffected by donor-like trap states like N vacancies, the Ga vacancies-induced acceptor-like traps significantly decreased the JSC and VOC due to an increase in recombination rate. As a result, the device with a high acceptor-like trap density dramatically degenerated the Pout. Therefore, growth of the high quality i-GaN with low acceptor-like traps is important for an enhanced Pout in BV cell.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

et al. 2020

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“…1,2) In recent years, wide bandgap semiconductors have been widely used as the energy converting material of betavoltaic batteries. [3][4][5] Compared with betavoltaic batteries based on Si 6) or GaAs, 7) they have a higher open-circuit voltage, conversion efficiency and radiation damage resistance. 8) Specifically, SiC (silicon carbide) is a wide bandgap semiconductor with high thermal capability, high carrier mobility, high breakdown field strength and excellent radiation resistance.…”

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First principles study on the time-related properties of 4H-³²SiC as an energy converting material of betavoltaic batteries

Li,

Lu,

Liu

et al. 2024

Appl. Phys. Express

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The radioactive 4H-32SiC is applied as energy converting material to fabricate high performance betavoltaic batteries. The time-related component change is considered, and the structural, stability and electrical property changes are calculated by Density Functional Theory (DFT). As time goes by, the number of 32Si atoms decrease exponentially while the concentration of 32S increases gradually. The Si63PC64 configurations have smaller lattice constants, while the lattices of Si62PSC64 configurations are larger. All Si63PC64 and Si62PSC64 configurations have very small bandgaps indicating the metallic behavior. This suggests that the betavoltaic battery with 4H-32SiC is likely to transform into a Schottky diode over time.

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Photovoltaics and nuclear energy conversion for space power

Prelas

Alam

Tchouaso

2023

Photovoltaics for Space

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Comparative study of GaN betavoltaic battery based on p-n junction and Schottky barrier diode

Cited by 12 publications

References 17 publications

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

First principles study on the time-related properties of 4H-³²SiC as an energy converting material of betavoltaic batteries

Photovoltaics and nuclear energy conversion for space power

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Comparative study of GaN betavoltaic battery based on p-n junction and Schottky barrier diode

Cited by 12 publications

References 17 publications

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

First principles study on the time-related properties of 4H-32SiC as an energy converting material of betavoltaic batteries

Photovoltaics and nuclear energy conversion for space power

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First principles study on the time-related properties of 4H-³²SiC as an energy converting material of betavoltaic batteries