Comparative study of InN growth on Ga‐ and N‐polarity GaN templates by molecular‐beam epitaxy

Xu, Ke; Terashima, Wataru; Hata, Toshio; Hashimoto, Naoki; Yoshitani, M.; Cao, Bingchen; Ishitani, Yoshihiro; Yoshikawa, Akihiko

doi:10.1002/pssc.200303456

Cited by 27 publications

(15 citation statements)

References 9 publications

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“…On the other hand, for the (10-12) peak, the FWHM in the case of no buffer layer is larger than that in the case of using a buffer layer. It was also found that the FWHM for the (10-12) peak of h-InN grown with a buffer layer were not too large considering that the FWHM for the (0002) peak are around 900 arcsec [4,5]. When the buffer layer is used and the h-InN layer grown is composed of single domain, the twist of the crystal is considerably restricted due to the small lattice mismatch between h-InN(10-10) and 3C-SiC(110).…”

Section: Resultsmentioning

confidence: 96%

Growth of high‐quality hexagonal InN on 3C‐SiC (001) by molecular beam epitaxy

Yaguchi

Kitamura

Nishida

et al. 2005

phys. stat. sol. (c)

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Section: Resultsmentioning

confidence: 96%

Growth of high‐quality hexagonal InN on 3C‐SiC (001) by molecular beam epitaxy

Yaguchi

Kitamura

Nishida

et al. 2005

phys. stat. sol. (c)

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“…In order to successfully grow InN film, many groups used relatively low growth temperatures (~460-550 °C) [6][7][8][9]. We have reported that the maximum growth temperature was different for successful epitaxy of InN films at different polarities, where the N-polar InN films could be grown at about 100 °C higher than In-polar ones [10]. As we know, high temperature is better for getting high crystalline quality and fabricating devices structures based on III-nitrides alloys including InN.…”

Section: Introductionmentioning

confidence: 96%

Temperature‐dependent growth and characterization of N‐polar InN films by molecular beam epitaxy

Wang

Che

Ishitani

et al. 2006

Physica Status Solidi (b)

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N-polar InN films were grown as a function of temperature (~440 -620 °C) on 500 nm thick GaN template by plasma-assisted molecular beam epitaxy. InN films grown at different temperatures showed different morphologies that could be roughly divided into two regions. Dendritic morphologies could be observed at temperatures lower than 540 °C while step-flow-like morphology could be obtained at temperatures higher than 540 °C. Crystalline quality became better with the increase of growth temperature at temperatures lower than 540 °C and almost saturated at higher temperatures. Strong photoluminescence was observed at room temperature and 13 K with the emission peaks at 0.67 and 0.7 eV, respectively. Based on our results, the growth temperature above 540 °C was recommended for N-polar InN epitaxy.

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“…N-polarity GaN was used as the buffer layer. We have already reported that the epitaxy temperature of InN can be about 100 o C higher in N-polarity than In-polarity [9,10]. We expected the N-polarity growth regime would be better even for the growths of In-rich AlInN ternary alloys and InN/AlInN MQWs.…”

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confidence: 93%

Fabrication of InN/AlInN MQWs by RF‐MBE

Terashima

Che

Ishitani

et al. 2006

Phys. Status Solidi (c)

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We studied on the growth of N-polarity InN/AlInN MQWs by radio frequency plasma-assisted MBE. We found that the growth temperature greatly affected the structural properties of InN/AlInN MQWs. The growth temperature for achieving fine periodic MQWs was in the range from 550 to 580 o C. By optimizing the growth conditions, we for the first time successfully fabricated InN-based MQWs with Al x In 1-x N (~0.2 < x < ~0.3) barrier layers. Clear satellite peaks up to the 3 rd order in high resolution X-ray diffraction were observed, indicating that being fine periodic MQWs-structures with fairly flat and sharp interfaces. Photoluminescence peaks ranging from 0.68 to 0.99 eV were observed depending on the well thickness and they were in good agreement with those estimated by simple theoretical calculation.1 Introduction It is expected that InN-based MQWs structures are applicable for photonic devices operating in optical communication wavelengths [1][2][3]. One of them is the ultra-high speed optical modulator with utilizing the ultra high-speed inter-subbands electron transition (ISBT). The energy relaxation rates for excited electrons in the InN-based MQWs are expected to be about 10 times faster than those for GaAs-based systems [4,5]. For the formation of higher energy levels in the conduction band of MQWs, the presence of large conduction band offset between the well and barrier is necessary. If we consider using GaN as the barrier layer, it would be able to get such large conduction band offset as 1.8 eV [6]. However, it would be difficult to construct high structural quality InN/GaN MQWs, because the lattice mismatch between InN and GaN is as large as 11% [7].On the other hand, AlInN ternary alloys are essentially more promising materials as the barrier layer than both GaN and InGaN, because the lattice mismatch can be remarkably decreased with keeping the conduction band offset larger than those when using GaN and InGaN as the barrier [6].We already studied on the epitaxy of AlInN ternary alloys by RF-MBE and succeeded in growing AlInN ternary alloys without any apparent phase separation in the whole composition range by optimizing the growth conditions. Further it was found that the bowing parameter of the energy bandgap E g for AlInN ternary alloys was about 4.78 ± 0.3 eV, where E g 's of InN and AlN were 0.64 and 6.14 eV, respectively [8]. Then we have expected that the Al composition x in Al x In 1-x N barrier for the InN well with keeping the same conduction band offset as that of InN/GaN MQWs is about 0.68. In this case the lattice mismatch in InN/Al 0.68 In 0.32 N MQWs is about 9%, i.e., the degree of the lattice mismatch is reduced to be about 80% compared with that of InN/GaN.

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Comparative study of InN growth on Ga‐ and N‐polarity GaN templates by molecular‐beam epitaxy

Cited by 27 publications

References 9 publications

Growth of high‐quality hexagonal InN on 3C‐SiC (001) by molecular beam epitaxy

Growth of high‐quality hexagonal InN on 3C‐SiC (001) by molecular beam epitaxy

Temperature‐dependent growth and characterization of N‐polar InN films by molecular beam epitaxy

Fabrication of InN/AlInN MQWs by RF‐MBE

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