Comparative study of ITO and FTO thin films grown by spray pyrolysis

Aouaj, M. Ait; Dı́az, R.; Belayachi, A.; Rueda, F.; Abd‐Lefdil, M.

doi:10.1016/j.materresbull.2009.02.019

Cited by 161 publications

(78 citation statements)

References 29 publications

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“…The blocking layer precursor solution consisted of 25 mM of InCl 3 and 2 mM of SnCl 4 •5H 2 O in 20% ethanol in water (the pH of the solution was adjusted to 0.5). 27 The hot (400°C) substrates were sprayed with 5 ml of the precursor solution. …”

Section: Ito Blocking Layermentioning

confidence: 99%

Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells

Perera

Daeneke

et al. 2016

NPG Asia Mater

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Indium tin oxide (ITO) is a well-known n-type degenerate semiconductor with a wide variety of electronic and optoelectronic applications. Herein ITO is utilized as a photocathode material in p-type dye-sensitized solar cells in place of the commonly applied and highly colored nickel oxide (NiO) semiconductor. The application of mesoporous ITO photocathodes, [Fe(acac) 3 ] 0/ − as a redox mediator and a new organic dye afforded an impressive energy conversion efficiency of 1.96 ± 0.12%. Comparative transient absorption spectroscopic studies indicated that the recombination rate at the ITO-electrolyte interface is two orders of magnitude faster than that of NiO. Analysis of the operation mechanism of the ITO-based devices with ultraviolet photon spectroscopy and photoelectron spectroscopy in air showed that ITO exhibits a significant local density of states arising below − 4.8 eV, which enables electron transfer to occur from the ITO to the excited dye, thus giving rise to the sustained photocathodic current. NPG Asia Materials (2016) 8, e305; doi:10.1038/am.2016.89; published online 9 September 2016 INTRODUCTION Transparent conducting oxides have been extensively used in optoelectronic applications. 1-3 One common transparent conducting oxide is indium tin oxide (ITO). ITO is a well-known n-type degenerate semiconductor 4 with an optical band gap of 3.5-4.3 eV 5 and has a high transmission in the near infrared and visible regions of the electromagnetic spectrum. Owing to their high optical transparency, good electrical conductivity, chemical inertness, hardness and excellent substrate adherence, 6-8 ITO thin films are applied in flat panel displays, antistatic coatings, solar cells, camera lenses and architectural glazing. 9-12 Additionally, high-surface-area mesoporous ITO films have been used as sensors for gases, such as ammonia, nitric oxide, ethanol and methanol. [13][14][15][16] Moreover, ITO films and ITO/TiO 2 core-shell structures have been utilized as photoanodes in both dye-sensitized solar cells (DSCs) and water oxidation devices. [17][18][19][20] A recent spectroscopic investigation into the charge transfer dynamics of dye-coated ITO films revealed that ITO can both accept and donate electrons during photoinduced charge transfer. 21,22 By exploiting the ambivalent property of this degenerate n-type semiconductor, we have developed an efficient p-type DSC (p-DSC)

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Section: Ito Blocking Layermentioning

confidence: 99%

Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells

Perera

Daeneke

et al. 2016

NPG Asia Mater

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“…Stannic oxide had a considerable attention due to its amazing properties like, eminent chemical stability, high transparency, low resistivity, SnO 2 is insulator in its bulk condition , while its shows a semiconductor behavior when prepared as a thin film due to the deviation from stoichiometry result as n-type semiconductor, top most infrared reflectivity, SnO 2 posses high electron mobility and wide band gap together with non toxicity and redundancy in nature [1][2][3][4]. For these reasons SnO 2 was spotlighted in many numerous applications such as potential anode in lithium ion batteries [5], solar cells [6], gas sensors [7,8], varistors [9] and photocatalysis [ 10].…”

Section: Introductionmentioning

confidence: 99%

Molar Concentration Effects on the Optical and Structural Properties of Nanostructural SnO<sub>2</sub> Thin Films

Habubi

Abood

Algamel

2016

ILCPA

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Thin films of nanostructured SnO 2 with different molarites were prepared by chemical spray pyrolysis technique. XRD analysis reveals that all the films were tetragonal polycrystalline with a preferred orientation along (110) plane. AFM measurements indicate that the value of the grain size for 0.05 M, 0.1 M and 0.15 M were 111nm, 78 nm and 58 nm respectively. SEM micrograph proved the existence of small cracks on the film surface, EDS confirmed the composition percentage ratio of Sn and O 2 and no trace of impurities could be detected. PL spectra gives the indication about optical energy gap and the effect of concentration on it which appeared as a blue shift. The transmittance was studied for the deposited thin films ,identifying that the transmittance decreases by the increase in molarity. The value of the optical energy gap of the deposited thin films was increased upon increasing molar concentration due o quantum confinement effect. The Urbach energy was also studied, their values decrease as the molar concentration increase.

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“…They can be widely used in various opticalelectrical devices, for example, solar cells, display panels, organic light-emitting diodes, flexible thin film transistors and optical coatings, etc [1][2][3][4] . Typical TCO is indium tin oxide (ITO) [5] , which has been by far most widely used because of its superb properties such as low resistivity (about 10 -4 cm) and high transmittance (>80%). Unfortunately, indium is toxic, scarce and consequently expensive, which will limit the large-scale economical production of ITO films in the future.…”

Section: Introductionmentioning

confidence: 99%

Effect of oxygen partial pressure on epitaxial growth and properties of laser-ablated AZO thin films

Wang

Luo

Shen

et al. 2016

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

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Al-doped ZnO (AZO) thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures (P O2 ). The effect of P O2 on the crystal structure, preferred orientation as well as the electrical and optical properties of the films was investigated. The structure characterizations indicated that the as-grown films were single-phased with a wurtzite ZnO structure, showing a significant c-axis orientation. The films were well crystallized and exhibited better crystallinity and denser texture when deposited at higher P O2 . At the optimum oxygen partial pressures of 10 -15 Pa, the AZO thin films were epitaxially grown on c-sapphire substrates with the (0001) plane parallel to the substrate surface, i e, the epitaxial relationship was AZO (000 1) // Al 2 O 3 (000 1). With increasing P O2 , the value of Hall carrier mobility was increased remarkably while that of carrier concentration was decreased slightly, which led to an enhancement in electrical conductivity of the AZO thin films. All the films were highly transparent with an optical transmittance higher than 85 %.

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Comparative study of ITO and FTO thin films grown by spray pyrolysis

Cited by 161 publications

References 29 publications

Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells

Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells

Molar Concentration Effects on the Optical and Structural Properties of Nanostructural SnO<sub>2</sub> Thin Films

Effect of oxygen partial pressure on epitaxial growth and properties of laser-ablated AZO thin films

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