Comparative study of photocells based on silicon doped with nickel by various methods

Abstract

In this work, the parameters of silicon-based photocells doped with impurity nickel atoms by diffusion methods and during growth were compared. It was found that photocells doped with impurity nickel atoms during silicon growth have an improvement in parameters comparable to that obtained by the diffusion doping method. Additional heat treatment at T=800oC makes it possible to significantly improve their basic parameters. Keywords:silicon, photocell, nickel, thermal annealing, diffusion.