Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

Lee, Sang‐Won; Jeon, Yong Woo; Kim, Sung‐Chul; Kong, Dongsik; Kim, Dae Hwan; Kim, Dong Myong

doi:10.1016/j.sse.2010.10.016

Cited by 19 publications

(8 citation statements)

References 11 publications

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“…In the legend S means “solution processed” (data compiled from refs. 66, 78–276 only dealing with GIZO TFTs, the ones corresponding to solution process are in Tables 2a, b and c.…”

Section: Recent Progress Of N‐type Oxide Tftsmentioning

confidence: 99%

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

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“…In the legend S means “solution processed” (data compiled from refs. 66, 78–276 only dealing with GIZO TFTs, the ones corresponding to solution process are in Tables 2a, b and c.…”

Section: Recent Progress Of N‐type Oxide Tftsmentioning

confidence: 99%

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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“…The information on oxide capacitance ( C ox ) and its associated electric permittivity (ε) can be obtained by capacitance–voltage ( C – V ) measurement on MOS capacitors. − The dimensions of the fabricated MOS capacitors are shown in the Figure S13 (SI). Figure (a–c) respectively shows the represented C – V curves at a frequency of 1 kHz for Sample A, B, and C. The small hysteresis between the forward and backward sweep indicates the lack of slow interface traps in all the samples, which is consistent with our TFT measurement, suggesting a high-quality TiO 2 /ZrO 2 interface. , The C ox can be extracted from the accumulation region at 2 V in the C – V curves when the semiconductor capacitance becomes negligible .…”

Section: Resultsmentioning

confidence: 99%

“…Figure (b–d) shows the measured equivalent parallel conductance ( G m /ω) as a function of applied voltage under different frequency for Sample A, B, and C. Two features can be commonly observed in the G m /ω– V curves for all the samples: (1) At a certain frequency, there exists a peak in the G /ω– V curves, and (2) the magnitude of the peak increases, and the position of the peak shifts toward a higher applied voltage as the applied frequency is increased. These features can be attributed to the trapping and detrapping process of the interface states, exchanging the electrons between the channel and localized interface states, the behavior of which can be described by the following equation: − where D it is the interface trap density, τ it is the corresponding trap lifetime constant, ω is angular frequency (ω = 2π f ), and e 0 is the elementary electron charge. Thus, the D it information can be quantitatively obtained by modeling the experimental G /ω–ω data according to eq .…”

Section: Resultsmentioning

confidence: 99%

Impact of ZrO₂ Dielectrics Thickness on Electrical Performance of TiO₂ Thin Film Transistors with Sub-2 V Operation

Zhang

Jia

Sales

et al. 2021

ACS Appl. Electron. Mater.

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In the present work, the impact of ZrO 2 gate dielectric thickness on the electrical performance of TiO 2 thin film transistors (TFTs) is systematically investigated. Exhaustive electrical measurements on TFTs, metal−insulator−metal, and metal−oxide−semiconductor capacitors are carried out with varying ZrO 2 dielectrics of different thicknesses. It is found that the ZrO 2 possesses an outstanding thickness scalability, providing reliable dielectric properties under an ultrathin physical thickness of 5 nm, while further reduction in ZrO 2 thickness would lead to a breakdown of the TFTs, indicating the physical limitations for the ultrathin ZrO 2 dielectrics. The TiO 2 TFTs with the 5 nm-thick ZrO 2 dielectric exhibit an enhanced electrical performance, including a high on/off current ratio (I on /I off ) of 7.7 × 10 8 , a nearly ideal subthreshold (SS) of 72 mV/dec, and a high electron mobility (μ eff ) of 5.74 cm 2 •V −1 •s −1 under an ultralow voltage of 2 V. Such prominent electrical characteristics with a battery-drivable low-voltage operation prove the suitability of the TiO 2 TFTs for Internet of Things applications. This comprehensive study, revealing the behaviors of leakage current, oxide capacitance, oxide charges, and interface traps with respect to the ZrO 2 thickness, sheds light on the quality and scalability of the ZrO 2 dielectrics that can be extended to other channel materials, and also offers a framework for evaluating the material quality of other dielectrics. Furthermore, from a material point of view, the underlying physical reasons for the excellent ZrO 2 thickness scalability are believed to be (1) the smooth surfaces of TiO 2 and ZrO 2 , (2) the well-structured ZrO 2 without detectable oxygen-related defects, and (3) the large conduction band offset between ZrO 2 and TiO 2 . Overall, this study not only shows that the TiO 2 TFTs hold great potential to empower future IoT applications, but also provides important guidance regarding dielectric scaling and quality evaluation in the nanometer scale.

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“…A substantial negative shift of the V th is observed in the TFT devices with the increasing hydrogen plasma treatment time. To quantitatively analyze the effect of hydrogen on the a-IGZO, the C−V characteristics were measured using a 2-terminal method reported in a previous paper, 38 as shown in Figure 1b. When the treatment time increased from 0 to 2 s, a significant increase in the gate capacitance per unit area (C i ), from 8.58 × 10 −4 to 1.27 × 10 −3 , was observed at 25 V and are shown in Table S1.…”

Section: Methodsmentioning

confidence: 99%

Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al₂O₃ Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors

Lee

Nam

Seo

et al. 2021

ACS Appl. Mater. Interfaces

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In this study, the excellent hydrogen barrier properties of the atomic-layer-deposition-grown Al2O3 (ALD Al2O3) are first reported for improving the stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). Chemical species in Al2O3 were artificially modulated during the ALD process using different oxidants, such as H2O and O3 (H2O–Al2O3 and O3–Al2O3, respectively). When hydrogen was incorporated into the H2O–Al2O3-passivated TFT, a large negative shift in V th (ca. −12 V) was observed. In contrast, when hydrogen was incorporated into the O3–Al2O3-passivated TFT, there was a negligible shift in V th (ca. −0.66 V), which indicates that the O3–Al2O3 has a remarkable hydrogen barrier property. We presented a mechanism for trapping hydrogen in a O3–Al2O3 via various chemical and electrical analyses and revealed that hydrogen molecules were trapped by C–O bonds in the O3–Al2O3, preventing the inflow of hydrogen to the a-IGZO. Additionally, to minimize the deterioration of the pristine device that occurs after a barrier deposition, a bi-layered hydrogen barrier by stacking H2O- and O3–Al2O3 is adopted. Such a barrier can provide ultrastable performance without degradation. Therefore, we envisioned that the excellent hydrogen barrier suggested in this paper can provide the possibility of improving the stability of devices in various fields by effectively blocking hydrogen inflows.

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Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

Cited by 19 publications

References 11 publications

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Impact of ZrO₂ Dielectrics Thickness on Electrical Performance of TiO₂ Thin Film Transistors with Sub-2 V Operation

Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al₂O₃ Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors

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Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

Cited by 19 publications

References 11 publications

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation

Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors

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Product

Resources

About

Impact of ZrO₂ Dielectrics Thickness on Electrical Performance of TiO₂ Thin Film Transistors with Sub-2 V Operation

Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al₂O₃ Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors