Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling

Aji, L. B. Bayu; Stavrou, Elissaios; Wallace, J. B.; Boulle, Alexandre; Debelle, A.; Kucheyev, S. O.

doi:10.1007/s00339-018-2325-7

Cited by 8 publications

(4 citation statements)

References 23 publications

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“…However, appropriate use of buffer layers acquiring load through the relaxation of mechanical stresses has helped improve the structural qualities of MQWs and SLs. While there remain a few intrinsic issues, which could constrain the design of opto-electronic device structures, solutions to these problems are not impossible and can be resolved by exploiting suitable experimental (e.g., growth, characterization [94][95][96][97][98][99][100][101][102][103][104][105][106][107]) and theoretical methods.…”

Section: Introductionmentioning

confidence: 99%

“…Although binary compounds are used in many technological applications, considerably less attention is paid to ternary alloys despite the successful growth of ultrathin epifilms. A variety of characterization techniques are also applied for analyzing/ monitoring their fundamental properties [94][95][96][97][98][99][100][101][102][103][104][105][106][107]. The classification of such methods includes reflection high-energy electron diffraction (RHEED) [94,95], Auger electron spectroscopy (AES) [96], He + Rutherford backscattering spectrometry (RBS) [97], atomic force microscopy (AFM) [98,99], high-resolution X-ray diffraction (HR-XRD) [100][101][102], transmission electron microscopy (XTEM) [103], photoluminescence (PL) [104], absorption, Fourier transform infrared (FTIR) spectroscopy [100][101][102], Raman scattering spectroscopy (RSS) [105][106][107] and spectroscopic ellipsometry (SE) techniques [107], etc.…”

Section: Introductionmentioning

confidence: 99%

“…A variety of characterization techniques are also applied for analyzing/ monitoring their fundamental properties [94][95][96][97][98][99][100][101][102][103][104][105][106][107]. The classification of such methods includes reflection high-energy electron diffraction (RHEED) [94,95], Auger electron spectroscopy (AES) [96], He + Rutherford backscattering spectrometry (RBS) [97], atomic force microscopy (AFM) [98,99], high-resolution X-ray diffraction (HR-XRD) [100][101][102], transmission electron microscopy (XTEM) [103], photoluminescence (PL) [104], absorption, Fourier transform infrared (FTIR) spectroscopy [100][101][102], Raman scattering spectroscopy (RSS) [105][106][107] and spectroscopic ellipsometry (SE) techniques [107], etc. It is to be noted that not only have these techniques validated their crystal structures but also helped in assessing the film thickness, strain, intrinsic electrical, and optical traits.…”

Section: Introductionmentioning

confidence: 99%

“…It is to be noted that not only have these techniques validated their crystal structures but also helped in assessing the film thickness, strain, intrinsic electrical, and optical traits. Despite the existence of numerous experimental studies on structural and electrical properties, there are limited IR absorption and RSS measurements [100][101][102][103][104][105][106][107] for evaluating their phonon characteristics.…”

Section: Introductionmentioning

confidence: 99%

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Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

Talwar

2024

Inorganics

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Novel zinc-blende (zb) group-IV binary XC and ternary XxY1−xC alloys (X, Y ≡ Si, Ge, and Sn) have recently gained scientific and technological interest as promising alternatives to silicon for high-temperature, high-power optoelectronics, gas sensing and photovoltaic applications. Despite numerous efforts made to simulate the structural, electronic, and dynamical properties of binary materials, no vibrational and/or thermodynamic studies exist for the ternary alloys. By adopting a realistic rigid-ion-model (RIM), we have reported methodical calculations to comprehend the lattice dynamics and thermodynamic traits of both binary and ternary compounds. With appropriate interatomic force constants (IFCs) of XC at ambient pressure, the study of phonon dispersions offered positive values of acoustic modes in the entire Brillouin zone (BZ)—implying their structural stability. For XxY1−xC, we have used Green’s function (GF) theory in the virtual crystal approximation to calculate composition x, dependent and one phonon density of states . With no additional IFCs, the RIM GF approach has provided complete in the crystallographic directions for both optical and acoustical phonon branches. In quasi-harmonic approximation, the theory predicted thermodynamic characteristics (e.g., Debye temperature ΘD(T) and specific heat Cv(T)) for XxY1−xC alloys. Unlike SiC, the GeC, SnC and GexSn1−xC materials have exhibited weak IFCs with low [high] values of ΘD(T) [Cv(T)]. We feel that the latter materials may not be suitable as fuel-cladding layers in nuclear reactors and high-temperature applications. However, the XC and XxY1−xC can still be used to design multi-quantum well or superlattice-based micro-/nano devices for different strategic and civilian application needs.

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