Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling

Abstract

2017) Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling. IEEE Transactions on Electron Devices, 64 (9). pp. 3713-3718. Permanent WRAP URL:Abstract -This paper analyses the effect of employing an Si on semi-insulating SiC (Si/SiC) device architecture for the implementation of 600-V LDMOSFETs using junction isolation and dielectric isolation reduced surface electric field technologies for high-temperature operations up to 300°C. Simulations are carried out for two Si/SiC transistors designed with either PN or silicon-on-insulator (SOI) and their equivalent structures employing bulk-Si or SOI substrates. Through comparisons, it is shown that the Si/SiC devices have the potential to operate with an offstate leakage current as low as the SOI device. However, the low-side resistance of the SOI LDMOSFET is smaller in value and less sensitive to temperature, outperforming both Si/SiC devices. Conversely, under high-side configurations, the Si/SiC transistors have resistances lower than that of the SOI at high substrate bias, and invariable with substrate potential up to −200 V, which behaves similar to the bulk-Si LDMOS at 300 K. Furthermore, the thermal advantage of the Si/SiC over other structures is demonstrated by using a rectangle power pulse setup in Technology Computer-Aided Design simulations.Index Terms-High-temperature operation, Power LDMOSFETs, reduced surface electric field (RESURF), semiconductor device modeling, silicon carbide, siliconon-insulator technology, silicon-on-silicon carbide.

Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits

“…3). The achieved breakdown voltage is well comparable to those presented in literature [8][9][10][11]. Fig.…”

Novel Si/SiC Heterojunction Lateral Double-Diffused Metal Oxide Semiconductor With SIPOS Field Plate by Simulation Study

“…However, due to the restrictions of "Silicon limit" [5][6], Si-based devices have reached its performance limitation, so the SiC materials obtain its opportunity. SiC material has the characteristics of the wide bandgap, high-thermal conductivity and critical electric field about 10 times that of the Si material [7]. The superior material properties of SiC allow it to be widely used in high-voltage and high-temperature applications [ 8 -10 ].…”

Si/SiC heterojunction lateral double‐diffused metal oxide semiconductor field effect transistor with breakdown point transfer (BPT) terminal technology

“…However, efforts of improving Si power devices are always limited by the low critical electric field of Si, which gives an opportunity for the development of silicon carbide (SiC) devices. SiC material has the characteristics of wide bandgap, high‐thermal conductivity and a critical electric field about 10 times that of the Si [10]. Nevertheless, SiC power devices suffer from gate oxide reliability and some difficulties in manufacturing processes such as the diffusion of impurity and the realisation of high‐quality ohm contact [11].…”

“…The active area of the Si/SiC LDMOS is fabricated by traditional Si manufacturing processes. The SiC substrate is expected to endure high‐electric field with breakdown point transfer (BPT) technology [11, 17], and served as a heatsink in a Si‐based integrated circuit at the same time [10]. With the deep drain region, the combination of Si and SiC optimises the electric field distribution of the LDMOS, thereby improving the device performance.…”