Comparative study of Single Crystal (SC)-Diamond and 4H-SiC bulk radiation detectors for room temperature alpha spectroscopy

Mohapatra, Sangram Keshori; Abhangi, M.; Vala, S.; Sahu, P. K.; Rath, S.; Murty, N. V. L. Narasimha

doi:10.1088/1748-0221/16/06/p06020

Cited by 7 publications

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“…The requirement for high-temperature electronics motivated the development of technologies for growth of wide bandgap (WBG) semiconductors due to the non-functioning of silicon-based electronics [1]. In particular, radiation hard materials such as Diamond and 4H-SiC materials have become popular for fusion-diagnostics applications [2,3], where the diagnostic system is exposed to high neutron fluence under high-temperature conditions [4]. The efficiency of the fusion process highly depends on the emitted alpha particles as these charged particles transfer their energy to the plasma while slowing down, which in turn provides power for self-sufficient burning plasma [5].…”

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confidence: 99%

Spectroscopic performance of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diode alpha particle detectors

2022

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Advancement in the growth of 4H-SiC with low micropipe densities (∼ 0.11 cm-2) in achieving high pure epitaxial layers, enabled the development of high-resolution 4H-SiC alpha particle Schottky radiation detectors for harsh environments. In particular, the study considers two types of 4H-SiC radiation detectors having Ni and Ti as Schottky contacts. They are fabricated by depositing Ni and Ti on 25 μm thick n-type 4H-SiC by epitaxially growing on 350 μm thick conducting SiC substrates. Electrical characterization and alpha spectral measurements performed on Ni/4H-SiC and Ti/4H-SiC SBDs are reported in this work. The spectral measurements were carried out using 241Am alpha emitting radioactive source. Ni/ 4H-SiC Schottky detector showed a better spectral response with 22.87 keV FWHM (∼ 0.416%) at a reverse bias of 150 V for 5.48 MeV alpha particles while Ti/4H-SiC Schottky detector achieved a resolution of 38.25 keV FWHM (∼ 0.697%) at 170 V reverse bias. This work presented spectral broadening analysis to understand the various factors affecting the energy resolution of the detectors. The extracted charge collection efficiencies (CCEs) are approximately 99% in both the detectors. In addition, polarization effects are not noticed in any of the fabricated detectors. The diffusion length of minority carriers (Lp ) is computed based on the drift-diffusion model by fitting the CCE curve as a function of applied bias, and the values are close to 9 μm and 7 μm for Ni/4H-SiC SBD and Ti/4H-SiC SBD detectors, respectively. Annealing at 400°C for 5 minutes in N2 ambient resulted in resolution of 23.98 keV FWHM (∼ 0.436%) for Ni/4H-SiC SBD detector at -170 V and 36.21 keV FWHM (∼ 0.661%) for Ti/4H-SiC SBD detector at -150 V. Overall Ni/4H-SiC SBD detectors showed superior spectral characteristics and superior resolution when compared to Ti/4H-SiC SBD detectors. However, the Ti/4H-SiC SBD detector fabricated in this work performed better than the previously reported work on a similar device structure. Hence, future work aimed at improving resolution of radiation detectors could also consider Ti/4H-SiC SBDs along with Ni/4H-SiC SBDs.

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