Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

Li, Shuai; Chen, Jieshi; He, Xiao; Zheng, Yi; Chun-yu,; Lu, Hao

doi:10.1016/j.apsusc.2023.157036

Cited by 52 publications

(15 citation statements)

References 37 publications

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“…12 12–14 Nevertheless, these alternative materials are deemed suboptimal due to inherent issues related to stability and subpar performance. 15–18 An emerging and promising strategy that we take notice is the substitution of one univalent and one trivalent metal cation for Pb within the crystal structure. This leads to the formation of double perovskites (DP), characterized by a formula of A 2 B + B 3+ X 6 .…”

Section: Introductionmentioning

confidence: 99%

Bandgap reduction and efficiency enhancement in Cs₂AgBiBr₆ double perovskite solar cells through gallium substitution

Ihtisham-ul-haq,

Khan,

Ullah

et al. 2024

RSC Adv.

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Section: Introductionmentioning

confidence: 99%

Bandgap reduction and efficiency enhancement in Cs₂AgBiBr₆ double perovskite solar cells through gallium substitution

Ihtisham-ul-haq,

Khan,

Ullah

et al. 2024

RSC Adv.

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“…The vast majority of knowledge about the fundamental properties of TMDCs has been gathered during studies that use dielectrics as substrates or on suspended samples. However, the metals that assist the large-area exfoliation or growth of TMDCs launched a new playground through orbital hybridization, energy transfer, strain, metal-induced gap states, and interfacial dipoles [38]. The interactions vary from long-range dispersive forces to covalent chemical bonding, depending on the TMDC, metal, and preparation of the interface.…”

Section: Introductionmentioning

confidence: 99%

When 2D materials meet metals

Pirker,

Honolka,

Velický

et al. 2024

2D Mater.

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This review delves into the intricacies of the interfaces formed between two-dimensional (2D) materials and metals, exploring a realm rich with fundamental insights and promising applications. Historically, our understanding of 2D materials emanated from studies employing dielectric substrates or suspended samples. However, integrating metals in the exfoliation and growth processes of 2D materials has opened up new avenues, unveiling various shades of interactions ranging from dispersive forces to covalent bonding.The resulting modifications in 2D materials, particularly transition metal dichalcogenides (TMDCs), offer more than a theoretical intrigue. They bear substantial implications for (opto)electronics, altering Schottky barrier heights and contact resistances in devices. We explore metal-mediated methods for TMDC exfoliation, elucidating the mechanisms and their impact on TMDC-metal interactions. Delving deeper, we scrutinize the fundamentals of these interactions, focusing primarily on MoS2 and Au.Despite the recent surge of interest and extensive studies, critical gaps remain in our understanding of these intricate interfaces. We discuss controversies, such as the changes in Raman or photoemission signatures of MoS2 on Au, and propose potential explanations. The interplay between charge redistribution, substrate-induced bond length variations, and interface charge transfer processes are examined. Finally, we address the intriguing prospect of TMDC phase transitions induced by strongly interacting substrates and their implications for contact design.

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“…For these reasons, graphene has been widely applied in photodetectors, solar cells, healthcare biosensors, chemical sensors, and flexible electronics . Recently, graphene and its derivatives have been vigorously attracted as electrode materials for energy storage devices. − The graphene, however, manipulating graphene characteristics requires the use of advanced techniques, thereby, graphene doping is a widely used method for fine-tuning of graphene work function and enhancing its electronic and hot electron photoelectric properties. − The tuning of the Fermi level of graphene through electrostatic doping, metallic nanoparticles decoration, and electrochemical doping is a widely used approach to control its structural, optical, pattern recognition, and electrical transport properties. − Moreover, chemical doping is considered the simplest and effective method for enhancing the electronic characteristics of 2D materials. − Although pure graphene exhibits an ambipolar field effect, it is not air-stable and is susceptible to unintended doping by compounds absorbed from the environment or residual compounds employed during device fabrication . Most graphene-based transistors with an ambipolar field effect are tested in a vacuum, argon, or nitrogen atmosphere where water or other contaminants have meager impact on the electrical properties of graphene.…”

Section: Introductionmentioning

confidence: 99%

Bipolar Photoresponse of a Graphene Field-Effect Transistor Induced by Photochemical Reactions

Khan,

Elahi,

Hassan

et al. 2023

ACS Appl. Electron. Mater.

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Graphene is an air-friendly material that can be easily p-doped by oxygen; therefore, a stable, defect-free, and efficient graphene n-doping technique should be developed for achieving high performance in electronic and optoelectronic devices. In this study, we present a unique method for n-type chemical doping of monolayer graphene grown through chemical vapor deposition. The doping process is thoroughly examined using X-ray photoelectron spectroscopy, Raman spectroscopy, and ultraviolet photoelectron spectroscopy. The findings demonstrate that the use of KBr solution is highly effective in achieving n-type doping in monolayer graphene, offering promising prospects for its practical application. Also, we fabricated graphene field-effect transistors and studied their electrical properties before (pristine) and after doping the graphene channel with different KBr concentrations (0, 0.05, 0.15, 0.20, and 0.25 M) in dark and under deep-ultraviolet (DUV) light conditions. During graphene doping in the dark environment, the charge neutrality point (CNP) shifted toward negative back gate voltages and then saturated at 0.25 M. After photochemical doping under DUV light, CNP further shifted toward negative gate voltages with improved carrier mobility at the same molar concentration of 0.25 M. Additionally, the photodetectors are fabricated from pristine and doped graphene which demonstrated bipolar photoresponse, thereby, a transition of negative photocurrent to a positive photocurrent when the concentration of the KBr solution reached 0.20 M. Moreover, their response time decreased from 8 to 3.5 s with increasing KBr concentration from 0 to 0.30 M. Finally, the gate voltage-dependent broadband photoresponsivity of doped graphene (0.25 M) was investigated at different wavelengths (220, 365, 530, and 850 nm). Thus, the controlled doping-induced bidirectional photoresponse can provide a facile route for logic gate applications.

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Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

Cited by 52 publications

References 37 publications

Bandgap reduction and efficiency enhancement in Cs₂AgBiBr₆ double perovskite solar cells through gallium substitution

Bandgap reduction and efficiency enhancement in Cs₂AgBiBr₆ double perovskite solar cells through gallium substitution

When 2D materials meet metals

Bipolar Photoresponse of a Graphene Field-Effect Transistor Induced by Photochemical Reactions

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Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

Cited by 52 publications

References 37 publications

Bandgap reduction and efficiency enhancement in Cs2AgBiBr6 double perovskite solar cells through gallium substitution

Bandgap reduction and efficiency enhancement in Cs2AgBiBr6 double perovskite solar cells through gallium substitution

When 2D materials meet metals

Bipolar Photoresponse of a Graphene Field-Effect Transistor Induced by Photochemical Reactions

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Product

Resources

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Bandgap reduction and efficiency enhancement in Cs₂AgBiBr₆ double perovskite solar cells through gallium substitution

Bandgap reduction and efficiency enhancement in Cs₂AgBiBr₆ double perovskite solar cells through gallium substitution