Comparative Study on Gate Insulators of Polymers and SiO<sub>2</sub>in Transport Properties of p- and n-Type Organic Field-Effect Transistors

Oku, Shinya; Nagase, Toshiya; Nagamatsu, Shuichi; Takashima, Wataru; Kaneto, Keiichi

doi:10.1143/jjap.49.01ab14

Cited by 4 publications

(5 citation statements)

References 23 publications

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“…The distribution of mobility ( a ) and operating voltage ( b ) of OTFTs based on polyimide as dielectrics in the ref. 24 – 36 and this work …”

Section: Resultsmentioning

confidence: 78%

“…2d ). Theoretically, in the imidization process, stretching vibration of carbon-carbon double bond (C=C, 1500 cm −1 ) of benzene ring keeps unchanged, therefore the ratio of peak intensity between ~1375 (C–N–C) and 1500 cm −1 (C=C) is generally used to calculate the degree of the imidization 36 – 38 . By defining 300 °C annealing resulting in complete imidization (100%), then the imidization degree (200 °C) of copolymer was calculated to be 89%, which further confirmed that polar groups (−COOH/−CONH) existed in the copolymer.…”

Section: Resultsmentioning

confidence: 99%

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Copolymer dielectrics with balanced chain-packing density and surface polarity for high-performance flexible organic electronics

Ji¹,

Li²,

Zou³

et al. 2018

Nat Commun

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The ever-increasing demand for flexible electronics calls for the development of low-voltage and high-mobility organic thin-film transistors (OTFTs) that can be integrated into emerging display and labeling technologies. Polymer dielectrics with comprehensive and balanced dielectric properties (i.e., a good balance between their insulating characteristics and compatibility with organic semiconductors) are considered particularly important for this end. Here, we introduce a simple but highly efficient strategy to realize this target by using a new type of copolymer as dielectrics. Benefiting from both high chain packing density guaranteeing dielectric properties and surface polarity optimizing molecular packing of organic semiconductors, this rationally designed copolymer dielectric endows flexible OTFTs with high mobility (5.6 cm2 V−1 s−1), low operating voltage (3 V) and outstanding stability. Further, their applicability in integrated circuits is verified. The excellent device performance shows exciting prospects of this molecular-scale engineered copolymer for the realization of plastic high-performance integrated electronics.

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“…The distribution of mobility ( a ) and operating voltage ( b ) of OTFTs based on polyimide as dielectrics in the ref. 24 – 36 and this work …”

Section: Resultsmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 99%

Copolymer dielectrics with balanced chain-packing density and surface polarity for high-performance flexible organic electronics

Ji¹,

Li²,

Zou³

et al. 2018

Nat Commun

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“…It was noted in this study that the n-type devices on flexible substrates exhibited better mobility and lower V T in contrast to those on Si/SiO 2 . On the contrary, p-type devices on Si/SiO 2 substrates were better than those on the flexible substrates [130].…”

Section: Materials Selection Criteria For Os Devicesmentioning

confidence: 90%

“…The performance comparison of OFETs using Si/SiO 2 and flexible polymer substrates was made [130] in terms of mobility and V T . PEN substrate, polyimide dielectric along with pentacene and PTCDI-C 13 as p and n-type semiconductors were used in these experimental OFET devices.…”

Section: Materials Selection Criteria For Os Devicesmentioning

confidence: 99%

Organic semiconductors for device applications: current trends and future prospects

Ahmad

2014

Journal of Polymer Engineering

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Abstract:With the rich experience of developing silicon devices over a period of the last six decades, it is easy to assess the suitability of a new material for device applications by examining charge carrier injection, transport, and extraction across a practically realizable architecture; surface passivation; and packaging and reliability issues besides the feasibility of preparing mechanically robust wafer/substrate of single-crystal or polycrystalline/ amorphous thin films. For material preparation, parameters such as purification of constituent materials, crystal growth, and thin-film deposition with minimum defects/ disorders are equally important. Further, it is relevant to know whether conventional semiconductor processes, already known, would be useable directly or would require completely new technologies. Having found a likely candidate after such a screening, it would be necessary to identify a specific area of application against an existing list of materials available with special reference to cost reduction considerations in large-scale production. Various families of organic semiconductors are reviewed here, especially with the objective of using them in niche areas of large-area electronic displays, flexible organic electronics, and organic photovoltaic solar cells. While doing so, it appears feasible to improve mobility and stability by adjusting π-conjugation and modifying the energy bandgap. Higher conductivity nanocomposites, formed by blending with chemically conjugated C-allotropes and metal nanoparticles, open exciting methods of designing flexible contact/interconnects for organic and flexible electronics as can be seen from the discussion included here.

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“…For flexible devices, C ins was directly measured by the capacitance of Au/ PMMA/Au fabricated on the same substrate, 8 being around 6 nF cm ¹2 . Ionization potential was evaluated in a BHT-TT film.…”

mentioning

confidence: 99%

Robust Hole Transport in a Thienothiophene Derivative toward Low-cost Electronics

Oku¹,

Takamiya²,

Adachi³

et al. 2010

Chemistry Letters

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A new p-type organic semiconductor, bis(hexylthiophenyl)-thienothiophene, was synthesized and evaluated for its transport characteristics. A robust hole transport was observed even on bare SiO 2 /Si and on flexible substrates under dark air conditions. The discovered characteristics reduce the surface-preparation necessary for device fabrication for low-cost electronics.Recently, organic semiconductors have been extensively studied for practical use in electronic devices. In particular organic thin-film transistor (OTFT) is a key device for the realization of plastic electronics. Stable flexible OTFT are required for flexible displays, radio frequency identification tags, and large-area sensors at low cost. 1 One of the advantages in plastic electronics is providing low cost flexible circuits. A simple procedure to fabricate OTFT is very important for reducing cost. Besides this, the surface energy of gate-insulators commonly affect on the film morphology of organic semiconductor layer, in which the transport performance is drastically changed with the grain boundary population. Various SAM preparations therefore have been proposed to improve transport performance. 2 For realizing the plastic logic circuits, a thin uniform gate-insulator is indispensable to form the OTFT on a film. Control of the surface energy of the gate-insulator is also another requirement related to the surface energy control.Air stability of organic semiconductor is another key factor for plastic electronics. Air-stable organic semiconductors will accelerate the development of plastic electronics by allowing use under ambient conditions. Related to this, several types of sophisticated air-stable organic semiconductors have been synthesized and evaluated in the recent past. 3 From a manufacturing point of view, a small number of synthesis step is highly favorable for chemical vendors. In particular, a simple ³-conjugation system in the molecule providing a relative large band gap is highly desirable. Wide band-gap molecules are candidates to possess intrinsic airstability due to the lower energy level of the highest occupied molecular orbital (HOMO).Poly(2,5-bis(5-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (pBTTT) is a well-known air-stable polymer showing relatively high hole transport performance. 4 Although the base unit of this polymer is a better candidate for an air-stable oligomer compared to quaterthiophene derivatives, there are no reports of the transport performance of this type of compound at the present stage. 5 In this report, a p-type organic semiconductor, 2,5-bis(5-hexylthiophen-2-yl)thieno[3,2-b]thiophene (BHT-TT) was synthesized ( Figure 1). It was revealed that the hole transport of BHT-TT is quite stable independent of the surface preparation of gateinsulator, by which the SAM process can skip from the fabrication procedure. Air-stability of the compound was also confirmed by the continuous measurement in dry air atmosphere in the dark.BHT-TT was synthesized by the Suzuki Miyaura coupling. 6 The detailed procedure is ...

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Comparative Study on Gate Insulators of Polymers and SiO₂in Transport Properties of p- and n-Type Organic Field-Effect Transistors

Cited by 4 publications

References 23 publications

Copolymer dielectrics with balanced chain-packing density and surface polarity for high-performance flexible organic electronics

Copolymer dielectrics with balanced chain-packing density and surface polarity for high-performance flexible organic electronics

Organic semiconductors for device applications: current trends and future prospects

Robust Hole Transport in a Thienothiophene Derivative toward Low-cost Electronics

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Comparative Study on Gate Insulators of Polymers and SiO2in Transport Properties of p- and n-Type Organic Field-Effect Transistors

Cited by 4 publications

References 23 publications

Copolymer dielectrics with balanced chain-packing density and surface polarity for high-performance flexible organic electronics

Copolymer dielectrics with balanced chain-packing density and surface polarity for high-performance flexible organic electronics

Organic semiconductors for device applications: current trends and future prospects

Robust Hole Transport in a Thienothiophene Derivative toward Low-cost Electronics

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Product

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Comparative Study on Gate Insulators of Polymers and SiO₂in Transport Properties of p- and n-Type Organic Field-Effect Transistors