Comparative study on performance of cubic AlxGa1−xN/GaN nanostructures MODFETs and MOS-MODFETs

Bouguenna, Driss; Stambouli, A. Boudghène; Mekkakia-Maaza, N.; Zado, A.; As, D. J.

doi:10.1016/j.spmi.2013.08.001

Cited by 10 publications

(6 citation statements)

References 18 publications

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“…For Al x Ga 1− x N all values are linearly interpolated except for the band gaps. In all calculations, a background n‐type doping of around 5 × 10 17 cm −3 in Al x Ga 1− x N and of around 1 × 10 17 cm −3 in GaN is assumed .…”

Section: Methodsmentioning

confidence: 99%

“…For Al x Ga 1Àx N all values are linearly interpolated except for the band gaps. In all calculations, a background n-type doping of around 5 Â 10 17 cm À3 in Al x Ga 1Àx N and of around 1 Â 10 17 cm À3 in GaN is assumed [11]. Furthermore, the partially compressively strained QWs and the tensilely strained Al x Ga 1Àx N barriers are taken into account in the simulations.…”

Section: Nextnanomentioning

confidence: 99%

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Structural and optical properties of MBE‐grown asymmetric cubic GaN/Al_xGa_1–xN double quantum wells

Wecker

Hörich

Feneberg

et al. 2014

Physica Status Solidi (b)

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The non-resonant carrier transfer in asymmetric double quantum wells is studied. Asymmetric cubic GaN/Al x Ga 1Àx N double quantum wells with Al content of x ¼ 0.26 AE 0.03 were grown on 3C-SiC (001) substrate by radio-frequency plasmaassisted molecular beam epitaxy. The barrier thickness d between a wide quantum well having 2.5 nm thickness and a narrow quantum well with width of 0.7 nm was varied from 1 to 15 nm. Furthermore, high resolution X-ray diffraction reciprocal space maps around the (113) direction provided the Al content and revealed a partially strain in the Al x Ga 1Àx N barriers and QWs. The coupling between the QWs was studied by interband photoluminescence spectroscopy at low temperatures. Four clearly distinguishable emission bands at 3.27 eV, 3.37 eV, 3.60 eV, and 3.74 eV are observed and could be assigned to the different layers. With decreasing barrier thickness d the photoluminescence intensity from the narrow QW is strongly reduced, indicating wave function redistribution from the narrow QW to the wide QW. The emission energies for the QWs are in good agreement with theoretical calculations using a Schrödinger-Poisson solver based on an effective mass model (nextnano 3 ). The PL intensity ratio of the narrow QW to the wide QW for varied barrier thicknesses was calculated by exploiting rate equations, revealing a good agreement between theory and experiment.

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Section: Methodsmentioning

confidence: 99%

Section: Nextnanomentioning

confidence: 99%

Structural and optical properties of MBE‐grown asymmetric cubic GaN/Al_xGa_1–xN double quantum wells

Wecker

Hörich

Feneberg

et al. 2014

Physica Status Solidi (b)

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show abstract

“…In all calculations a background n-type doping of around 5 × 10 17 cm −3 in Al x Ga 1−x N and of around 1 × 10 17 cm −3 in GaN is assumed. 10) Other necessary parameters for nextnano 3 are summarized in Table I. All the parameters have been linearly interpolated between GaN and AlN for AlGaN.…”

Section: Nextnano 3 Simulationsmentioning

confidence: 99%

Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al_0.25Ga_0.75N double quantum well grown by molecular beam epitaxy

Wecker

Callsen

Hoffmann

et al. 2016

Jpn. J. Appl. Phys.

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Optical transitions involving higher energy levels of cubic AlGaN quantum wells are investigated by means of photoluminescence excitation spectroscopy. An asymmetric cubic GaN/Al x Ga 1%x N double quantum well (QW) structure with an Al content of x = 0.25 + 0.03 was grown on a 3C-SiC(001) substrate exploiting radio-frequency plasma-assisted molecular beam epitaxy. The photoluminescence excitation data reveals two emission bands, which are assigned to the first electron and the third heavy hole (e1-hh3) and the second electron and the second heavy hole (e2-hh2) energy level of the wide QW. Besides in the narrow QW no higher energy levels can be observed. The experimental data is in good agreement with theoretical calculations using a Schrödinger-Poisson solver based on an effective mass model (nextnano 3). The exciton binding energy was calculated considering the confinement of the QWs and also the energy dependency of the effective mass for excited energy levels.

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“…In the recent past substantial breakthroughs in group-III nitride (AlN, GaN, and InN) based materials science have advanced design and fabrication of optoelectronic devices as diodes [1,2], transistors [3][4][5][6], catalysts [7,8], or sensors [9,10] from fundamental research to commercial distribution. Group-III nitrides naturally crystallize as stable hexagonal (hex) crystals in a polar wurtzite (wz) structure belonging to space group P 6 3 mc (C 4 6v ).…”

Section: Introductionmentioning

confidence: 99%

“…Within the present study, we will focus on the less common nonpolar zincblende phases of Al x Ga 1−x N alloys, whose centrosymmetric crystal structure effectively prevents the technologically limiting emergence of polarization fields [6,27,50]. A key characteristic of the electronic structure and, thus, related physical properties of the nonpolar zb-Al x Ga 1−x N semiconductors, is the presence of a direct-indirect band-gap crossing around x ≈ 0.65 in the fundamental alloy-energy gap [51].…”

Section: Introductionmentioning

confidence: 99%

Understanding band alignments in semiconductor heterostructures: Composition dependence and type-I–type-II transition of natural band offsets in nonpolar zinc-blendeAlxGa1−xN/Aly
Landmann
¹
,
Rauls
²
,
Schmidt
³

2017
Phys. Rev. B
19
0
6
0
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The composition dependence of the natural band alignment at nonpolar Al x Ga 1−x N/Al y Ga 1−y N heterojunctions is investigated via hybrid functional based density functional theory. Accurate band-gap data are provided using Heyd-Scuseria-Ernzerhof (HSE) type hybrid functionals with a composition dependent exact-exchange contribution. The unstrained band alignment between zincblende (zb) Al x Ga 1−x N semiconductor alloys is studied within the entire ternary composition range utilizing the Branch-point technique to align the energy levels related to the bulklike direct v → c and indirect, pseudodirect, respectively, v → X c type transitions in zb-Al x Ga 1−x N. While the zb-GaN/Al x Ga 1−x N band edges consistently show a type-I alignment, the relative position of fundamental band edges changes to a type-II alignment in the Al-rich composition ranges of zb-Al x Ga 1−x N/AlN and zb-Al x Ga 1−x N/Al y Ga 1−y N systems. The presence of a direct-indirect band-gap transition at x c = 0.63 in zb-Al x Ga 1−x N semiconductor alloys gives rise to a notably different composition dependence of band discontinuities in the direct and indirect energy-gap ranges. Below the critical direct-indirect Al/Gacrossover concentration, the band offsets show a close to linear dependence on the alloy composition. In contrast, notable bowing characteristics of all band discontinuities are observed above the critical crossover composition.

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Comparative study on performance of cubic AlxGa1−xN/GaN nanostructures MODFETs and MOS-MODFETs

Cited by 10 publications

References 18 publications

Structural and optical properties of MBE‐grown asymmetric cubic GaN/Al_xGa_1–xN double quantum wells

Structural and optical properties of MBE‐grown asymmetric cubic GaN/Al_xGa_1–xN double quantum wells

Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al_0.25Ga_0.75N double quantum well grown by molecular beam epitaxy

Understanding band alignments in semiconductor heterostructures: Composition dependence and type-I–type-II transition of natural band offsets in nonpolar zinc-blendeAlxGa1−xN/Aly
Landmann
¹
,
Rauls
²
,
Schmidt
³

2017
Phys. Rev. B
19
0
6
0
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Comparative study on performance of cubic AlxGa1−xN/GaN nanostructures MODFETs and MOS-MODFETs

Cited by 10 publications

References 18 publications

Structural and optical properties of MBE‐grown asymmetric cubic GaN/AlxGa1–xN double quantum wells

Structural and optical properties of MBE‐grown asymmetric cubic GaN/AlxGa1–xN double quantum wells

Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy

Understanding band alignments in semiconductor heterostructures: Composition dependence and type-I–type-II transition of natural band offsets in nonpolar zinc-blendeAlxGa1−xN/AlyLandmann1, Rauls2, Schmidt3 2017Phys. Rev. B19060View full textAdd to dashboardCite

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Structural and optical properties of MBE‐grown asymmetric cubic GaN/Al_xGa_1–xN double quantum wells

Structural and optical properties of MBE‐grown asymmetric cubic GaN/Al_xGa_1–xN double quantum wells

Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al_0.25Ga_0.75N double quantum well grown by molecular beam epitaxy

Understanding band alignments in semiconductor heterostructures: Composition dependence and type-I–type-II transition of natural band offsets in nonpolar zinc-blendeAlxGa1−xN/Aly
Landmann
¹
,
Rauls
²
,
Schmidt
³

2017
Phys. Rev. B
19
0
6
0
View full text Add to dashboard Cite