Comparative study on structural and optical properties of nitrogen rich InN on Si(110) and 6H-SiC

Amirhoseiny, M.; Hassan, Z.; Ng, Sha Shiong

doi:10.1179/1743294413y.0000000157

Cited by 11 publications

(3 citation statements)

References 35 publications

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“…Compared with the theoretical value (3?39 eV), this peak has a blue drift ,0?08 eV. The drift is considered to be a result induced by the Burstein-Moss effect [17][18][19] and the grain size effect. Meanwhile, the stress induced by the mismatch between GaN and ITO is also responsible for the blue drift.…”

Section: Resultsmentioning

confidence: 71%

GaN Films deposited on ITO coated glass

Zhao

Qin

Bai

et al. 2015

Surface Engineering

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GaN films have been fabricated on tin doped indium oxide (ITO) coated glass substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapour deposition. Trimethyl gallium (TMGa) and N 2 were acted as precursors of Ga and N respectively. A GaN buffer layer was introduced to reduce the internal stress between the substrate and the GaN films. Then, the deposition process was performed in N 2 rich atmosphere at a constant substrate temperature as low as 460uC. The TMGa flowrate was fixed at 1?5 sccm and N 2 flowrate varies from 80 to 110 sccm to investigate the influence of N 2 flux rates on the films' properties. Reflection high energy electron diffraction and X-ray diffraction results indicate that all deposits are highly c axis oriented, whereas the characteristics of photoluminescence spectra are strongly affected by the N 2 flowrates. GaN films prepared at 100 sccm has a smooth surface and exhibits the optimal illumination performance. This inexpensive GaN/ITO/glass structure has potential application in optoelectronic devices.

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Section: Resultsmentioning

confidence: 71%

GaN Films deposited on ITO coated glass

Zhao

Qin

Bai

et al. 2015

Surface Engineering

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“…EDX indicates that the thin film consists of aluminium, nitrogen, silicon and oxygen. The presence of the oxygen in the deposited thin film is associated to the common contamination of AlN in nonequilibrium growth techniques such as spin coating [13]. Fig.…”

Section: Experimental Detailmentioning

confidence: 99%

Growth and Characterization of Aln Thin Film Deposited by Sol-Gel Spin Coating Techniques

Fahana

Lee

Fong

et al. 2015

AMR

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This study signifies the growth and characterization of aluminium nitride (AlN) thin film deposited on the atmospheric plasma treated n-type silicon [n-Si (100)]. Basically, the low cost spin coating technique which emphasized the production of a thin and uniform film on a flat substrate through a dilute solution is adopted. For the precursor preparation, the main ingredient of aluminium nitrate hydrate is dissolved with an organic solvent. The nitridation process is carried out on the deposited coating at 1100 °C for 1 hour. The surface morphology and structural properties of the thin film were investigated by field-emission scanning electron microscope, atomic force microscopy energy, dispersive X-ray spectroscopy and X-ray diffraction; while the optical properties of the deposited thin film was determined by using Fourier transform infrared spectrometer. All the results revealed that AlN thin film was successfully deposited on n-Si (100) substrate.

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“…[1][2][3] This is because of their superior physical properties such as wide band gap energy, broad coverage of the electromagnetic spectrum, and high thermal stability. [4][5][6][7] InGaN violet quantum well (QW) lasers have promised the next generation of laser sources which will have safe and wide applications for high density optical disc systems such as blue-ray disc (BD) and HD-DVD, and other applications. 8 Simple manipulations of electrical and optical properties of semiconductor materials are the main reason why these materials are of great technological importance.…”

Section: Introductionmentioning

confidence: 99%