Two-dimensional (2D) van der Waals
heterostructures formed by stacking two different 2D materials have
gained immense attention as they have the potential to show interesting
properties. Herein, we report the detailed electronic structure of
recently synthesized MoS2/SnS2 and MoSe2/SnS2 heterostructures obtained through density
functional calculations. Our study shows that the MoS2/SnS2 heterostructure has a type-I band alignment with an indirect
band gap, while MoSe2/SnS2 exhibits a type-II
band alignment with a direct band gap. In type-II MoSe2/SnS2 heterobilayers, the hole and electron charge carriers
are localized on two different 2D layers and thus show spatial charge
separation, which lowers electron–hole recombination and prolongs
carrier lifetime; thus, they are useful candidates for solar cell
applications. Both the heterostructures MoS2/SnS2 and MoSe2/SnS2 retain their type-I and type-II
band alignments, respectively, under applied uniaxial strain (both
tensile and compressive). Moreover, both the heterostructures show
excellent optical absorption (105 cm–1) in the entire UV–visible range. The robust type-I and type-II
band alignments as well as strong optical absorption indicate that
the two heterostructures studied may have good prospects in optoelectronic
and photovoltaic applications.