Comparative Study on Three Types of Ordered Structures (TP-A, CuPt-A, CuPt-B) in AlInAs, GaInAs, AIInP, and GaInP – Bonding Energy Difference Effects.

Gomyo, Akiko; Suzuki, Tohru; Makita, Kikuo; Sumino, Masayoshi; Hino, Isao

doi:10.1557/proc-417-91

Cited by 4 publications

(1 citation statement)

References 15 publications

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“…3,4,16,17 Using reflection high energy electron diffraction ͑RHEED͒ in the GSMBE system, Gomyo et al found a surface with a (2ϫ3) periodicity for the growth conditions resulting in layers with TPO. 3,4,16,17 Using reflection high energy electron diffraction ͑RHEED͒ in the GSMBE system, Gomyo et al found a surface with a (2ϫ3) periodicity for the growth conditions resulting in layers with TPO.…”

Section: ͓S0003-6951͑00͒02011-8͔mentioning

confidence: 99%

The use of a surfactant (Sb) to induce triple period ordering in GaInP

Fetzer

Lee

Shurtleff

et al. 2000

Applied Physics Letters

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A surfactant is used to induce an ordered structure in an epitaxial layer. The addition of small amounts of triethylantimony during the organometallic vapor phase epitaxy growth of GaInP on (001) GaAs substrates is shown to remove CuPt ordering with a resultant increase in band gap energy. Increasing the concentration of Sb in the vapor beyond a critical Sb to P ratio [Sb/P(v)] of 4×10−4 gives a reversal of this behavior. The band gap energy is observed to decrease by 50 meV at a concentration of Sb/P(v)=1.6×10−3, coincident with the formation of an ordered phase with a period triple the normal lattice spacing along the [111] and [1̄1̄1] directions. The formation of this new ordered structure is believed to be related to high concentrations of Sb on the surface, which leads to a change in the surface reconstruction from (2×4)-like to (2×3)-like, as indicated by surface photoabsorption performed in situ.

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