Comparing the MESFET and HEMT models for efficient circuit design

Abstract

SUMMARYIn this paper, the relative advantages of several widely used MESFET and HEMT models have been compared. The nonlinear behaviours of the Curtice quadratic, Curtice cubic, Statz, Materka, Rodriguez, and Chalmers models were investigated through their current-voltage-temperature characteristics. To better fit such characteristics, neural-based models of MESFET and HEMT were generated using a Levenberg-Marquardt back-propagation algorithm. Close agreement was observed between simulated results and experimental data.

Novel neural approach for parameter extraction of microwave transistor noise models

“…Owing to their learning and generalization abilities, ANNs have been established as an efficient modeling tool in many Radio Frequency (RF) and microwave applications . The ANNs used in this work are multilayered ANNs .…”

Microwave neural modeling for silicon FinFET varactors

“…Contrary to the physical and equivalent circuit models, the approach based on artificial neural networks (ANNs) allows obtaining an accurate representation of the device behavior without having to analyze the device structure or the physical processes in it. Among other applications in the field of microwaves [11][12][13][14][15][16], ANNs have been already successfully applied for small-signal and large-signal modeling of different types of high-frequency transistors, such as metal-semiconductor field effect transistor (MESFET), highelectron-mobility transistor (HEMT), metal-oxide-semiconductor field-effect transistor (MOSFET), and heterojunction bipolar transistor (HBT) [17][18][19][20][21][22][23][24][25][26][27][28][29][30] as well as FinFET transistor [31][32][33], which represents an innovative multiple-gate architecture for the downscaling of the complementary metal-oxidesemiconductor technology [34][35][36][37][38]. The present study is aimed at presenting the results achieved by using the ANNs for modeling the scattering (S-) parameters up to 50 GHz for a varactor realized in the advanced FinFET technology, which has already been represented with an equivalent circuit model [9].…”