Lacunar spinels, GaM4X8 (M = V, Nb, Mo, Ta,
W; X = S, Se, Te), constitute a rare class of compounds with multiferroic
properties. Recently, one member of this family, GaV4S8, received global attention due to the Néel-type skyrmions
discovered in this material. Previous investigations strongly indicate
the important role of the structure behind the multiferroicity, for
example, the strong impact of ferroelectric transition on the exchange
interactions at ∼40 K. Inspired by the delicate entanglement
of lattice, spin, and charge degrees of freedom, in the present work,
we aimed to use pressure to alter the structure and thus change the
material’s properties to establish the inter-relation between
the structural, optical, and electrical properties for a better understanding
of this skyrmion host material. Upon this objective, in situ high-pressure
measurements of single crystal/powder X-ray diffraction, electrical
conductivity, and Raman spectroscopy were carried out by using a diamond
anvil cell. These studies revealed the pressure-induced structural
transformation from cubic to orthorhombic, along with a transition
from semiconductor to metallic state in GaV4S8. The phase changes coincide with the variation in the optical property
in this material explored by Raman spectra. We also determined the
bulk modulus of the two phases of GaV4S8 by
fitting the data set of unit cell volumes against pressure with the
second-order birth-Murnaghan equation of state, and explained the
mechanisms of phase transitions by means of the Jahn–Teller
effect and the anisotropic changes in bonding lengths during compression.