“…Cu thin film, used as the basic component, can greatly affect the performances of integrated circuits, which also indicates the possible directions to optimize the properties of devices by improving the quality of the Cu film. Among numerous factors changing the quality of the thin film, the sputtering target with features of high purity, grain refinement, random orientations, and large scale should be considered primarily due to the following reasons: (i) Only Cu and Cu alloy targets with purities of 6 N or above can well ensure the uniformity of sputtering film and the fine wiring quality [5]; (ii) the finer the grain is, the faster the sputtering rate is, while the more homogeneous grain size has more uniform deposition rate and sputtering film [6,7]; (iii) for face-centered cubic (FCC) metals, the sputtering rate is S (111) > S (100) > S (110) [8,9], while the atomic line density is L (110) > L (100) > L (111) , indicating that the random crystallographic orientations of the sputtering target can improve the uniformity Crystals 2021, 11, 1113 2 of 12 of film [7,10,11]. Clearly, the uniform and fine grain size combined with random orientations in the target can improve the quality of the sputtering film.…”