Comparision of wide band gap semiconductors for power electronics applications

Jain, Heena; Rajawat, Shiv Pratap Singh; Agrawal, Puja

doi:10.1109/amta.2008.4763184

Cited by 47 publications

(31 citation statements)

References 3 publications

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“…Lower on-resistance is another huge advantage of WBG semiconductors which directly lessens the conduction losses and therefore increases the converter efficiency. For GaN and SiC, this value is approximately 10 times lower than the respective Si value [4]. Higher thermal conductivity of SiC, not GaN, in comparison with Si corresponds to more efficient heat transfer from heat sink and thus gaining lower junction temperature.…”

Section: Gallium Nitride (Gan) Characteristicsmentioning

confidence: 97%

On the suitability of Gallium-Nitride (GaN) based automotive power electronics

Dargahi

Williamson

2010

2010 IEEE Vehicle Power and Propulsion Conference

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Abstract─This paper aims at discussing the possibility of using GaN power devices in automotive power electronics applications. The major issues with current silicon-based devices are highlighted in this paper. Furthermore, the paper also discusses the possible solutions offered by wide-band gap semiconductors, specifically Gallium-Nitride (GaN). The fundamental steps in designing GaN devices includes choosing the substrate, the dimensions of each layer, the length of gate, drain, source, and the distance between them, selecting materials for contacts, and finally, optimizing passivation layer. Moreover, to achieve higher breakdown voltages, field plate technology has to be executed. High voltage, high current, and high temperature operation of previously fabricated GaN devices are studied and summarized. It can be concluded that GaN definitely has the potential to dominate the next generation of automotive power electronic systems. However, certain issues, such as normally-off and vertical operation have to be thoroughly elucidated.

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Section: Gallium Nitride (Gan) Characteristicsmentioning

confidence: 97%

On the suitability of Gallium-Nitride (GaN) based automotive power electronics

Dargahi

Williamson

2010

2010 IEEE Vehicle Power and Propulsion Conference

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“…I [9]. Compared to Si, the WBG materials have higher junction operating temperature, higher thermal conductivity and lower thermal expansion coefficient, where the latter two properties make the packaging of the WBG power devices more reliable over a larger range of temperatures.…”

Section: Background On Wbg Devicesmentioning

confidence: 98%

Impact of SiC MOSFET traction inverters on compact-class electric car range

Kumar

Bertoluzzo

Buja

2014

2014 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES)

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The advent of power devices based on Wide BandGap (WBG) semiconductor materials, like the Silicon Carbide (SiC) MOSFETs, can improve the overall performance of the power converter systems, by reducing the conversion losses and enabling operation at higher switching frequency. This paper analyzes the range extension of electric vehicles (EVs) ensuing from the adoption of SiC devices for the traction inverter. As a case study, a compact-class electric car equipped with a Silicon (Si) IGBT traction inverter is considered. After introducing the driving cycle used to evaluate the range, the time graphs of currents and voltages applied by the inverter to the traction motor along the driving cycle are calculated. A loss model for Si and SiC devices is then formulated, and the losses of the Si IGBT inverter over the driving cycle are found and compared to the losses obtainable with a SiC MOSFET inverter. For the case study, the analysis shows that a SiC MOSFET inverter can extend the electric car range up to 5

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“…In Figure 1 , a timeline of the semiconductor devices’ introduction is presented. Currently, the future of the semiconductor technology industry is looking into the utilization of semiconductor materials such as silicon-carbide (SiC), gallium nitride (GaN) and aluminum nitride (AlN) which have energy band gap of about 2 eV, 3.4 eV and 6.2 eV respectively, for manufacturing of power electronic devices [ 59 , 60 , 61 , 62 , 63 , 64 , 65 , 66 ]. These semiconductors have extremely high mechanical, chemical and thermal stability [ 67 , 68 ].…”

Section: Brief Historymentioning

confidence: 99%

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Jiya

Gouws

2020

Micromachines

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As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the power electronics industry has over the years hinged on the progress of the semiconductor device industry. The semiconductor device industry could be said to be on the edge of a turn into a new era, a paradigm shift from the conventional silicon devices to the wide band gap semiconductor technologies. While a lot of work is being done in research and manufacturing sectors, it is important to look back at the past, evaluate the current progress and look at the prospects of the future of this industry. This paper is unique at this time because it seeks to give a good summary of the past, the state-of-the-art, and highlight the opportunities for future improvements. A more or less ‘forgotten’ power electronic switch, the four-quadrant switch, is highlighted as an opportunity waiting to be exploited as this switch presents a potential for achieving an ideal switch. Figures of merit for comparing semiconductor materials and devices are also presented in this review.

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Comparision of wide band gap semiconductors for power electronics applications

Cited by 47 publications

References 3 publications

On the suitability of Gallium-Nitride (GaN) based automotive power electronics

On the suitability of Gallium-Nitride (GaN) based automotive power electronics

Impact of SiC MOSFET traction inverters on compact-class electric car range

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

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