Comparison between desaturation sensing and Rogowski coil current sensing for shortcircuit protection of 1.2 kV, 300 A SiC MOSFET module

Mocevic, Slavko; Wang, Jun; Burgos, Rolando; Boroyevich, Dushan; Stancu, Constantin; Jaksic, Marko; Peaslee, Brian

doi:10.1109/apec.2018.8341393

Cited by 37 publications

(16 citation statements)

References 11 publications

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“…Both currents form a right angle, which in Fig. 4a permit magnetic fluxes generated by i adj (t) to cut the inner window of the coil perpendicularly and in the opposite direction as i(t) [6][7][8]. These interfering fluxes are marked as ' × ' in the figure.…”

Section: Basic Operating Principles Of Pcb Rcsmentioning

confidence: 99%

“…Its value therefore does not need to be highly specific. With (8) or (9) and (10), the inductance of the Rogowski coil can thus be determined, but for even better accuracy, the inductance of the non-negligible track between the coil and external integrator must be included. For that, assuming that its length and width are l trace and w, respectively, this third contributing inductance can be computed using L trace = μ 0 l trace 2π ln 2l trace w + 0.5 + 0.2235 w l trace (11) Eventually, the self-inductance of the overall PCB Rogowski coil can be piecewise computed as…”

Section: Proposed Modelling Of Screen-returned Pcb Rogowski Coilmentioning

confidence: 99%

“…The measurement of switch current has always been essential for determination of characteristics [1][2][3], real-time extraction of junction temperature [4], protection and control [5][6][7][8]. However, with silicon carbide (SiC) devices, their fast switching speeds and sensitivities to parasitic parameters have noticeably complicated their current measurements [5,9], which now require a current sensor with an extremely wide bandwidth and a high-noise immunity.…”

Section: Introductionmentioning

confidence: 99%

“…Exclusion of a magnetic core can therefore be of interest, like in the non-intrusive Rogowski current sensor (RCS), which in the literature, has been suggested for measuring current through a fast SiC device [5][6][7][8]. Structurally, RCS is very simple too, comprising only a Rogowski coil and an integrator.…”

Section: Introductionmentioning

confidence: 99%

“…Such accuracy has not been demonstrated in the literature. For comprehensiveness, the prospective passive [22] and active [6][7][8][13][14][15][16] integrators for regenerating the desired current waveform from the four-layer Rogowski coil have also been described. The eventual solution identified is a modified noninverting integrator, whose wide range of integration and lack of DC offset, pre-shoot and distorted droop problems have promptly met demands of the coil.…”

Section: Introductionmentioning

confidence: 99%

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Structure and modelling of four‐layer screen‐returned PCB Rogowski coil with very few turns for high‐bandwidth SiC current measurement

Lei¹,

Xin²,

Liu

et al. 2020

IET Power Electronics

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Accurate measurement of current through a silicon carbide (SiC) device is especially challenging, because of its fast switching speed. Its accompanied current sensor must hence have a high-bandwidth and a high-noise immunity. It must also not interfere with operation of the device. Due to these, the printed-circuit-board (PCB) Rogowski current sensor is particularly suitable, but normally requires many layers. With only four layers, the existing Rogowski coils are not yet capable of shielding ambient voltage and magnetic noises simultaneously. Moreover, their computed and measured self-inductances are usually very different with errors as high as 45% reported in the literature. To resolve these issues, an alternative four-layer screen-returned PCB coil has been presented. The described coil uses very few turns to preserve its high bandwidth at the expense of even tougher determination of its self-inductance. An alternative piecewise modelling method has therefore been proposed for finding its self-inductance, needed for designing its theoretical bandwidth. These, together with a non-inverting integrator, permit current through an SiC device to be measured accurately, as demonstrated experimentally.

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Section: Basic Operating Principles Of Pcb Rcsmentioning

confidence: 99%

Section: Proposed Modelling Of Screen-returned Pcb Rogowski Coilmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Structure and modelling of four‐layer screen‐returned PCB Rogowski coil with very few turns for high‐bandwidth SiC current measurement

Lei¹,

Xin²,

Liu

et al. 2020

IET Power Electronics

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An improved desaturation short-circuit protection method for SiC power modules

Qin

Huang

et al. 2022

Energy Reports

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Analysis on characteristic of 3.3‐kV full SiC device and railway traction converter design

Ding

Dou

Qian

et al. 2022

IET Power Electronics

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With the rapid development of wide‐band gap semiconductor chip and package technologies, the voltage class of commercial silicon carbide (SiC) device is gradually improved. This paper concentrates on the latest 3.3‐kV full SiC‐based metal oxide semiconductor field‐effect transistor (MOSFET) device and its application in railway traction. First, compared with the Si‐based insulated‐gate bipolar transistor (IGBT), the SiC‐based MOSFET shows lower switching loss but weaker short‐circuit capacity. Second, in the railway traction application, the SiC‐based MOSFET with high switching frequency could reduce the inverter loss, the harmonic loss and the noise of traction motor. Third, a well‐designed filter is necessary between the inverter and the motor to prevent the motor from terminal overvoltage and insulation problem, which are resulted from long cable and high dv/dt. Finally, a full‐SiC railway traction inverter prototype is built and tested, and shows obvious advantages on miniaturization and lightweight.

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Comparison between desaturation sensing and Rogowski coil current sensing for shortcircuit protection of 1.2 kV, 300 A SiC MOSFET module

Cited by 37 publications

References 11 publications

Structure and modelling of four‐layer screen‐returned PCB Rogowski coil with very few turns for high‐bandwidth SiC current measurement

Structure and modelling of four‐layer screen‐returned PCB Rogowski coil with very few turns for high‐bandwidth SiC current measurement

An improved desaturation short-circuit protection method for SiC power modules

Analysis on characteristic of 3.3‐kV full SiC device and railway traction converter design

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