Comparison between Si-LDMOS and GaN-based microwave power transistors

Nuttinck, S.; Gebara, E.; Laskar, J.; Rorsman, Niklas; Olsson, Jörgen; Zirath, Herbert; Eklund, Klas-Håkan; Harris, Mike

doi:10.1109/lechpd.2002.1146744

Cited by 3 publications

(6 citation statements)

References 9 publications

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“…Currently, although the improvements in LDMOS amplifier characteristics allow for frequency ranges up to 22 GHz, GaN-based amplifiers [9] achieve frequencies up to 30 GHz at power densities up to five times higher, although at higher prices than LDMOS devices. Figure 4 shows the LDMOS and GaN transistor structures.…”

Section: Ldmos Versus Gan Power Amplifiersmentioning

confidence: 99%

LDMOS versus GaN RF Power Amplifier Comparison Based on the Computing Complexity Needed to Linearize the Output

Saez¹,

Marques

2019

Electronics

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In order to maximize the efficiency of telecommunications equipment, it is necessary that the radio frequency (RF) power amplifier is situated as closely as possible to its compression point. This makes its response nonlinear, and therefore it is necessary to linearize it, in order to minimize the interference that nonlinearities cause outside the useful band (adjacent channel). The system used for this linearization occupies a high percentage of the hardware and software resources of the telecommunication equipment, so it is interesting to minimize its complexity in order to make it as simple as possible. This paper analyzes the differences between the laterally diffused MOSFET (LDMOS) and gallium nitride (GaN) power amplifiers, in terms of their nonlinearity graphs, and in terms of the greater or lesser difficulty of linearization. A correct choice of power amplifier will allow for minimization of the linearization system, greatly simplifying the complexity of the final design.

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Section: Ldmos Versus Gan Power Amplifiersmentioning

confidence: 99%

LDMOS versus GaN RF Power Amplifier Comparison Based on the Computing Complexity Needed to Linearize the Output

Saez¹,

Marques

2019

Electronics

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“…However, the major setbacks of these silicon devices are its low breakdown capabilities, lower bandwidth range and small range of operating temperatures [9].…”

Section: Gallium Nitride Compound As Alternativementioning

confidence: 99%

“…From equation (3)(4)(5)(6)(7)(8)(9)(10)(11)(12), it can be observed that by plotting the forward currentvoltage curve in the semi-log scale, the ∅ and n can be determined from the yintercept and the slope of the plot respectively. Hence, the Schottky Barrier height and ideality factor can be calculated respectively from equation (3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13) and (3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14):…”

Section: Schottky Contact Parameters Extraction (Current-mentioning

confidence: 99%

“…Where n is the carrier charge density, and t is the sample thickness (d x t represents the effective cross section area, A). Combining equation (3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16) and (3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17), the Hall field can be derived as below:…”

Section: Hall Measurementsmentioning

confidence: 99%

“…The Au-free HEMT devices exhibit a smoother surface morphology and overall lower off-state current. Furthermore, excellent ION/IOFF ratio ~ 9 with a Subthreshold Swing of 71.42 mV/dec which are desirable for fast switching power applications, were observed in the fabricated devices.…”

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confidence: 91%

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Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon

Tham¹

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"Moore's Law" states that the number of transistors in an integrated circuit will double approximately every two years. True to this observation, the number of transistors per Si IC indeed has doubled every 18 months since the 1970s. In accordance with the scaling trend predicted in Moore's Law, not only is the packing density of transistors increased but devices' performance are significantly improved as well. However as the size of transistors continuously shrinks, several issues such as the fundamental limitation of Si, quantum

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Microwave Power Amplifiers

Colantonio,

Giannini,

Limiti

2005

Encyclopedia of RF and Microwave Engineering

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Microwave Power are discussed, focusing mainly on solid‐state implementations. Starting with an introduction on solid‐state and vacuum device power generating capabilities and solid‐state active realization technologies and materials, this article introduces and defines the basic quantities defining and characterizing a microwave power amplifier. The basic concepts of operating class and the relevant expected performances are addressed, including reference cases. Power balance considerations are inferred and high‐efficiency power amplifier design techniques are detailed, including both harmonic tuning approaches and switched‐mode amplifier schemes. Measurement‐based approaches (load pull) and computer‐aided design techniques are also discussed.

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Comparison between Si-LDMOS and GaN-based microwave power transistors

Cited by 3 publications

References 9 publications

LDMOS versus GaN RF Power Amplifier Comparison Based on the Computing Complexity Needed to Linearize the Output

LDMOS versus GaN RF Power Amplifier Comparison Based on the Computing Complexity Needed to Linearize the Output

Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon

Microwave Power Amplifiers

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