Comparison Characteristic of Large Area Graphene Films Grown by Chemical Vapor Deposition with Nano-Graphite Structures

Abstract

Abstract-The unique properties of graphene are making it an attractive material for a wide variety of applications in nano-electronic. Various techniques have been developed to produce graphene to realize its potential applications. Chemical vapor deposition (CVD) of graphene films on Cu substrate is a primary technique for high quality graphene synthesis. In this work we demonstrate the growth of large area graphene layers by chemical vapor deposition (CVD) on copper substrates. Graphene growth was achieved by the flow of methane and hydrogen gasses over a copper thin film acting as catalyst at ambient pressure. Optimal growth conditions were found by varying the different parameters. A transfer process was carried out through treatment with a nickel etchant solution to isolate the graphene with using polymer bond for placement on an oxidized silicon substrate. Transfer methods are essential for effective optical contrast and SEM microscopy measurements. Characterization was performed with optical microscopy, Raman spectroscopy, XRD, SEM and other to determine the quality of layers.