Comparison of {311} Defect Evolution in SIMOX and Bonded SOI Materials

Abstract

The effect of silicon-on-insulator ͑SOI͒ substrate type and surface silicon thickness on extended defect evolution due to silicon ion implantation has been investigated. Nonamorphizing silicon implants ranging from 15 to 48.5 keV, 1 ϫ 10 14 cm Ϫ2 , were performed into SOITEC and separation by implantation of oxygen ͑SIMOX͒ wafers. Subsequently, furnace anneals were performed at 750°C in an inert ambient. Quantitative transmission electron microscopy was used to measure the trapped interstitial concentration, defect density, and defect size. The type of surface silicon/buried oxide interface ͑e.g., SIMOX or SOITEC͒ does not appear to affect the decay of the trapped interstitial population or the evolution of the defect microstructure. However, the thickness of the surface silicon/BOX interface strongly affects the evolution of ͕311͖ defects, as well as the decay of trapped interstitials. The interface appears to promote formation of dislocation loops as the trapped interstitial population evolves.

Kinetics of {311} defect dissolution in silicon-on-insulator (SOI)

“…1-4 agree with previous studies of dislocation loop and {3 1 1} evolution in SOI [10,11]. As the implant energy increases, or the surface silicon thickness Table 4 Extracted activation energies from Fig.…”

“…As the implant energy is increased to 48.5 keV, the {3 1 1} defects in the 1450 Å SOI appear to be less stable than bulk Si. These phenomena have been discussed previously by Saavedra et al [11]. It should be noted that all trapped interstitials are assumed to be in {3 1 1} defects at the first time point for each of the three temperatures.…”

“…This phenomenon is likely to be critical as SOI devices are scaled. Previous studies have shown that dislocation loop [10] and {3 1 1} [11] nucleation can depend strongly on the SOI thickness and/or implant energy. The present study set out to investigate the reaction kinetics of {3 1 1} defect dissolution in SOI, and then compare it to bulk silicon.…”

A rigorous comparison of X-ray diffraction thickness measurement techniques using silicon-on-insulator thin films

“…Owing to the bonding method used to make these samples, the [001] direction of the SOI layer is tilted by approximately 0.4 along the [110] direction with respect to the substrate [001] vector. This tilt angle is only a result of the initial position of the starting wafers during the bonding process; there is no fundamental link between the orientations of the substrate and the SOI film (Saavedra et al, 2004).…”

Intelligent Detector of Internal Combustion Engine Cylinder Pressure and Sensitivity Temperature Coefficient Compensation

“…Two mainstream technologies of manufacturing SOI wafer are separation by implantation of oxygen [10,11] (SIMOX) and bonding technology. SIMOX technology refers to the technology where large dose oxygen ions are implanted into initial silicon, then SOI structure is formed after high temperature annealing.…”