Comparison of 600V Si, SiC and GaN Power Devices

Chowdhury, Sauvik; Stum, Zachary; Li, Zhong Da; Ueno, Katsunori; Chow, T. Paul

doi:10.4028/www.scientific.net/msf.778-780.971

Cited by 33 publications

(13 citation statements)

References 3 publications

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“…MOSFETs have been the predominant choice for bidirectional OBC converters compared to other switching devices because of its wide availability and its power capability. In fact, as SiC MOSFET devices have a blocking voltage of 600V to 1700V, they can easily deal with battery voltages from 200V to 800V in most EVs [139].…”

Section: B Wbg Devicesmentioning

confidence: 99%

A Review of Bidirectional On-Board Chargers for Electric Vehicles

et al. 2021

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The fast development of electric vehicles (EVs) provides significant opportunities to further utilize clean energies in the automotive. On-board chargers (OBCs) are widely used in EVs because of their simple installation and low cost. Limited space in the vehicle and short charging time require an OBC to be power-dense and highly efficient. Moreover, the possibility for EVs to deliver power back to the grid has increased the interest in bidirectional power flow solutions in the automotive market. This paper presents a comprehensive overview and investigation on the state-of-the-art solutions of bidirectional OBCs. It reviews the current status, including architectures and configurations, smart operation modes, industry standards, major components, and commercially available products. A detailed overview of the promising topologies for bidirectional OBCs, including two-stage and single-stage structures, is provided. Future trends and challenges for topologies, wide bandgap technologies, thermal management, system integration, and wireless charging systems are also discussed in this paper.

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Section: B Wbg Devicesmentioning

confidence: 99%

A Review of Bidirectional On-Board Chargers for Electric Vehicles

et al. 2021

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“…GaN (gallium nitride) has attracted attention as a nextgeneration semiconductor material because of its unique physical properties, including a high dielectric breakdown voltage derived from a wide bandgap and a high saturation electron velocity. [1][2][3][4][5][6][7] Owing to these characteristics, GaN has been widely used in practical device applications such as high electron mobility transistors, vertical power devices and light-emitting diodes. 5,[7][8][9][10][11][12] However, the use of GaN involves two crucial issues.…”

Section: Introductionmentioning

confidence: 99%

Effect of reactive gas condition on nonpolar AlN film growth on MnS/Si (100) by reactive DC sputtering

Morita

Ishibashi²,

Takahashi³

et al. 2022

Jpn. J. Appl. Phys.

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The effects of reactive gas flow conditions on nonpolar AlN film growth on MnS/Si　(100) substrates using reactive DC magnetron sputtering were investigated. During AlN deposition at a substrate temperature of 750 °C, the MnS surface can be unintentionally nitrided, resulting in a decrease in the crystallinity of the AlN. Low temperature growth of the AlN layer at 300 °C prevents this nitridation and results in the crystallization of nonpolar AlN. A N2 flow equal to 30% of the Ar sputtering gas flow was found to improve the crystallinity of the nonpolar AlN and to reduce nitrogen defects, which play an important role in interfacial reactions. Nitrogen defects promote the formation of alloys such as AlMn and MnSi that degrade the interface and can significantly decompose the MnS. A higher proportion of N2 improves the nonpolar AlN crystallinity, reduces the concentration of defects and suppresses reactions at the AlN/MnS interface.

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“…In recent years, gallium nitride devices have become promising candidates for power electronic applications. A heterojunction at the AlGaN/GaN interface gives gallium nitride devices enormous advantages over their Si and SiC counterparts [9,10]. The high concentration of carriers and their high mobility make it possible to use the heterojunction as a channel layer with an extremely low resistivity, which ensures the flow of currents with an extremely high density in the channel of GaN devices [11,12].…”

Section: Introductionmentioning

confidence: 99%

The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications

2021

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In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al0.23Ga0.77N/GaN epi structure with Ni-based anodes demonstrated two orders of magnitude lower reverse currents than diodes with GaN/Al0.25Ga0.75N/GaN epitaxial structure. Diodes with Ni-based anodes demonstrated lower VON and higher IF compared with diodes with Pt-based anodes. As a result of these investigations, an optimal set of parameters was selected, providing the following electrical characteristics: VON = 0.6 (at IF = 1 mA/mm), forward voltage of the diode VF = 1.6 V (at IF = 100 mA/mm), maximum reverse voltage VR = 300 V, reverse leakage current IR = 0.04 μA/mm (at VR = −200 V), and total capacitance C = 3.6 pF/mm (at f = 1 MHz and 0 V DC bias). Obtained electrical characteristics of the lateral Schottky barrier diode demonstrate great potential for use in energy-efficient power applications, such as 5G multiband and multistandard wireless base stations.

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Comparison of 600V Si, SiC and GaN Power Devices

Abstract: In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.

Cited by 33 publications

References 3 publications

A Review of Bidirectional On-Board Chargers for Electric Vehicles

A Review of Bidirectional On-Board Chargers for Electric Vehicles

Effect of reactive gas condition on nonpolar AlN film growth on MnS/Si (100) by reactive DC sputtering

The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications

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