Comparison of acrylate and methacrylate resin system in ArF lithography

Uetani, Yasunori; Fujishima, Hiroaki

doi:10.1117/12.388260

Cited by 6 publications

(10 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[ 48 ] Here we examine the infl uence of a non-reactive α , γ -butyrolactonemethacrylate (GBLMA) comonomer incorporated onto the PMAdMA resist polymer. Incorporation of lactones in the polymer improves the imaging [49][50][51] in terms of resist sensitivity to PEB, development contrast, and LER. However, the infl uence of GBLMA on the photoacid diffusion and LILS has not been examined in detail.…”

Section: Copolymer Compositionmentioning

confidence: 99%

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Prabhu¹,

Kang²,

VanderHart³

et al. 2010

Advanced Materials

View full text Add to dashboard Cite

Photoresist materials enable the fabrication of advanced integrated circuits with ever-decreasing feature sizes. As next-generation light sources are developed, using extreme ultraviolet light of wavelength 13.5 nm, these highly tuned formulations must meet strict image-fidelity criteria to maintain the expected performance gains from decreases in feature size. However, polymer photoresists appear to be reaching resolution limits and advancements in measurements of the in situ formed solid/solid and solid/liquid interface is necessary. This Review focuses on the chemical and physical structure of chemically amplified photoresists at the lithographic feature edge at length scales between 1 nm and 100 nm. Neutron reflectivity measurements provide insight into the nanometer-scale composition profiling of the chemical latent image at an ideal lithographic line-edge that separates optical resolution effects from materials processing effects. Four generations of advanced photoresist formulations were examined over the course of seven years to quantify photoresist/photoacid and photoresist/developer interactions on the fidelity of lithographic features. The outcome of these measurements complement traditional resist design criteria by providing the effects of the impacts of the photoresist and processing on the feature fidelity. These physical relations are also described in the context of novel resist architectures under consideration for next-generation photolithography with extreme-ultraviolet radiation.

show abstract

Section: Copolymer Compositionmentioning

confidence: 99%

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Prabhu¹,

Kang²,

VanderHart³

et al. 2010

Advanced Materials

View full text Add to dashboard Cite

show abstract

“…Similar trends were reported by Uetani et al when MAMA or 2-methy-2-adamantyl acrylate (MADA) copolymers with SLM or SLA were compared for relative etch rates. 8 Although it is desirable to use SLA instead of SLM to improve the etch resistance (relative PER as well as etch rate) with Methacrylate I, it was also reported that the replacement of SLM with SLA causes dramatic deterioration in lithographic performance with Methacrylate I. However, when CLM was replaced with CLA (from Methacrylate II to (Meth)acrylate II), 50/50 MAMA/CLA copolymer exhibited similar lithographic performance to that of 50/50 MAMA/CLM copolymer.…”

Section: Per Study With (Meth)acrylate-based 193 Nm Photoresistsmentioning

confidence: 99%

“…This bubbling defect might be more pronounced with MADA/SLA due to its less mechanical strength leading to severe surface damage reported by others. 8 This strange morphology is most likely associated with the relatively low glass transition temperature (T g ~ 120 °C) of MADA/CLA copolymer. From this observation, it appears that improved etch properties of acrylate-containing polymers such as (Meth)acrylate II are partially due to their elastic response, resulting from their low T g 's, in the plasma environment.…”

Section: Per Study With (Meth)acrylate-based 193 Nm Photoresistsmentioning

confidence: 99%

“…It was reported that superior etch resistance with acrylate-containing polymers is due to the possible crosslinking reaction during etching and this cross-linking reaction is associated with the radiation sensitive α-hydrogen in acrylates. 8 If this is the case, it is difficult to explain the surface damage with MADA/SLA and the bubbling defect with MADA/CLA after blanket oxide etch. If the cross-linking reaction occurs with acrylate, T g of MADA/CLA should be raised during the etch process limiting the excessive chain mobility and thereby improving surface restructuring capability.…”

Section: Per Study With (Meth)acrylate-based 193 Nm Photoresistsmentioning

confidence: 99%

See 1 more Smart Citation

Mechanistic understanding of post-etch roughness in 193-nm photoresists

Bae¹,

Barclay²,

Bolton³

et al. 2003

Advances in Resist Technology and Processing XX

View full text Add to dashboard Cite

Surface roughness of 193 nm resists after a dry etch process is one of the critical issues in the implementation of 193 nm lithography to sub-100 nm technology nodes. Compared to commercial 248 nm resists, 193 nm photoresists exhibit significant roughness especially under the etch conditions for dielectrics, such as silicon dioxide and silicon nitride. While AFM analysis of DUV resists exhibit the mean roughness (R a ) of ~1 nm after blanket oxide etch, R a 's of 193 nm resists were found to be in the range of 4 to 7 nm depending on the chemical structure of the resist backbone. In an effort to develop 193 nm resists with improved post-etch roughness (PER), we carried out exhaustive screening of the available 193 nm resist platforms using bulk oxide etch followed by AFM analysis of the resist surface. Benchmarking results indicated that cyclic olefin copolymers, prepared by vinyl addition copolymerization of norbornene derivatives, exhibit significantly better PER than (meth)acrylic copolymers, cyclic olefin/maleic anhydride (COMA) copolymers, or COMA/(meth)acrylic copolymers (COMA hybrid). In this paper, are addressed various factors that influence PER of 193 nm resists and presented solutions to overcome etch inferiority with 193 nm resists for the real device fabrication.

show abstract

“…With the exception of PinAc, the remaining acrylates have been previously used in chemically amplified photoresists. [13][14][15][16][17][18][19][20][21][22][23] PinAc, whose synthesis is described in the Supporting Information, was developed by us as an alternative to t-BuAc. In principle, it provides greater polarity and a less volatile leaving group (pinacolone vs isobutylene).…”

Section: Resultsmentioning

confidence: 99%

New Amorphous Fluoropolymers of Tetrafluoroethylene with Fluorinated and Non-Fluorinated Tricyclononenes. Semiconductor Photoresists for Imaging at 157 and 193 nm

et al. 2006

View full text Add to dashboard Cite

Twenty-two tricyclo[4.2.1.0 2,5 ]non-7-ene (TCN) or 3-oxatricyclononene monomers, having fluorinated or nonfluorinated substituents on the four-membered rings, were prepared by cycloaddition reactions of functionalized olefins with norbornadiene or quadricyclane. Radical polymerizations with tetrafluoroethylene (TFE) and/or TFE and acrylates provided amorphous polymers with high solubility in standard organic solvents. The TFE/TCN dipolymers typically have glass transition temperatures of over 200°C, substantially higher than TFE copolymers with norbornene. Perfluoroalkyl sulfonyl fluoride groups can be incorporated in the side chains of the TCN monomers giving soluble copolymers. Polymers which also incorporated acrylate monomers were prepared using a semibatch process to control composition. Selected polymers incorporating tertiary alkyl ester groups from the TCN monomer or acrylates have shown good image formation when compounded with a photoacid generator, imaged with 157 or 193 nm light, and developed using aqueous base.

show abstract

Comparison of acrylate and methacrylate resin system in ArF lithography

Cited by 6 publications

References 0 publications

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Mechanistic understanding of post-etch roughness in 193-nm photoresists

New Amorphous Fluoropolymers of Tetrafluoroethylene with Fluorinated and Non-Fluorinated Tricyclononenes. Semiconductor Photoresists for Imaging at 157 and 193 nm

Contact Info

Product

Resources

About