Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices

Pirro, L.; Jayakumar, A.; Zimmerhackl, O.; Lipp, D.; Illgen, R.; Muehlhoff, A.; Pfuetzner, R.; Zaka, A.; Otto, Michael; Hoentschel, J.; Raffel, Yannick; Seidel, Konrad; Olivo, Ricardo

doi:10.1109/irps46558.2021.9405122

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Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices

Cited by 2 publications

References 7 publications

Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process

Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process

Three Level Charge Pumping On Dielectric Hafnium Oxide Gate

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