Comparison of Anodic and Au-Au Thermocompression Si-Wafer Bonding Methods for High-pressure Microcooling Devices

Abstract

Silicon-based microchannel technology offers unmatched performances for cooling high energy physics silicon-pixels detectors. Although Si-Si direct bonding, used for the fabrication of cooling plates, meets the stringent requirements of this application, in particular high-pressure resistance (~200 bar), it is reported to be a challenging and expensive process. In this work, we have evaluated two alternative bonding methods towards a more cost-effective fabrication process: Si-Glass-Si anodic bonding (AB) with a thin-film glass and Au-Au thermocompression (TC). The bonding strength of the two methods were evaluated with destructive pressure burst tests (0 - 690 bar) on test structures, each made of a 1×2 cm2 silicon die etched with a tank and an inlet channel and sealed with a plain silicon die using AB or TC bonding. The pressure resistance of the structures was measured to be higher for the TC sealed samples (max. 690 bar) than for the AB ones (max. 530 bar) but less reproducible. The failure analysis indicates that the AB structure resistance is limited by the adhesion force of the deposited layers. Nevertheless, both the TC and AB methods provided sufficient bond quality to hold the high pressure required for the high energy physics pixel detectors cooling application.