Comparison of characteristics and integration of copper diffusion-barrier dielectrics

Wang, T.C.; Cheng, Yi-Lung; Wang, Y.L.; Hsieh, Tsung−Eong; Hwang, Gwo Jen; Chen, C.F.

doi:10.1016/j.tsf.2005.07.059

Cited by 40 publications

(18 citation statements)

References 11 publications

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“…The barrier properties of various barrier films were evaluated by SIMS. 4, nitrogen-doped silicon carbide films are more strongly adhesive, indicating that the nitrogen element in the barrier film forms new chemical bonds with the Cu atoms, 12 increasing the adhesion strength. The Cu diffusion depth is defined as the depth at which the Cu concentration is four orders of magnitude lower than that at the interface between the barrier film and the Cu film.…”

Section: Barrier Property To Cu Diffusionmentioning

confidence: 99%

Comprehensive comparison of electrical and reliability characteristics of various copper barrier films

Cheng

Chiu

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Electrical and reliability performances of nitrogen-incorporated silicon carbide dielectric by chemical vapor deposition J.Multilayered metal capping barrier including CuSiN, for sub-65 -nm technology nodesThe effect of interlevel dielectric on the critical tensile stress to void nucleation for the reliability of Cu interconnectsThe physical, electrical, and reliability characteristics of various Copper ͑Cu͒ barrier films, including SiC, SiCN, SiCO, SiCNO, and SiN, were investigated. The experimental results indicate that the SiN film is the best barrier film against Cu diffusion, adheres strongly to Cu film, and exhibits reliable electromigration ͑EM͒ performance, but its dielectric constant is too high. Nitrogen-doped or oxygen-doped silicon carbide films ͑SiCN or SiCO͒ have a lower dielectric constant, but at the cost of reduced reliability. SiCNO film that is doped with both nitrogen and oxygen exhibits more reliable EM and stress-migration with a comparable physical and electrical performance to that of the SiN film.

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Section: Barrier Property To Cu Diffusionmentioning

confidence: 99%

Comprehensive comparison of electrical and reliability characteristics of various copper barrier films

Cheng

Chiu

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…9,10 In addition to sputtering deposition and laser vapor deposition methods, silicon carbonitride films have been prepared by plasma-enhanced chemical vapor deposition (PECVD), using multi-precursors such as SiH 4 +NH 3 (N 2 )+CH 4 11, 12 and SiH(CH 3 ) 3 +NH 3 . 8,13,14 In recent years, single source precursors, such as hexamethyldisilazane (HMDS), for low-k SiC x N y applications, 9,15 and tris(dimethylamino)silane 16 and 1,3-bis(dimethylsilyl)-2,2,4,4-tetramethylcyclo-disilazane, 10 for increased mechanical and tribological performance, have been the subject of much research, because they retain the ready fragments and allow better control of the composition of films, compared to multi-precursors.…”

mentioning

confidence: 99%

Low-k SiC_xN_yFilms Prepared by Plasma-Enhanced Chemical Vapor Deposition Using 1,3,5-trimethyl-1,3,5-trivinylcyclotrisilazane Precursor

Chen

Leu

2012

J. Electrochem. Soc.

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Low-k silicon carbonitride (SiC x N y ) films with k of 3.6-4.6 were prepared by radio frequency plasma-enhanced chemical vapor deposition at 25 to 400 • C under low power density of 0.15 W/cm 3 , using a single source precursor, 1, 3, 5-trimethyl-1, 3, 5trivinylcyclotrisilazane (VSZ), and Ar. At lower deposition temperatures (≤ 200 • C), most cyclic VSZ structures were preserved in the SiC x N y films, resulting in a lower density (1.60-1.76 g/cm 3 ), a lower dielectric constant (k∼3.6-3.9) and a fairly good elastic modulus of 22.0-25.0 GPa. When the deposition temperature was raised to 400 • C, the cyclic N-Si-N linkages were reformed to a dense Si-N structure, with the desorption of CH x bonds, resulting in higher density (2.0 g/cm 3 ), a dielectric constant of 4.6, and an excellent elastic modulus of 65.2 GPa. The leakage current density of SiC x N y films was reduced from 1.5×10 −6 to 4.0×10 −8 A/cm 2 at 1 MV/cm, upon increasing the deposition temperature from 25 • C to 400 • C. The conduction mechanism of the SiC x N y films, except the film deposited at 400 • C and tested under higher electric field, exhibited Schottky emission due to few charged defects by using a cyclic VSZ precursor and a lower plasma power density of 0.15 W/cm 3 .

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“…The details for the SiCN process had been discussed in other papers. 17,18 As seen in Fig. 9, it can be clearly indicated that this reference structure has the most robust electromigration endurance, implying that the Cu capping layer dominates the electromigration performance.…”

Section: Resultsmentioning

confidence: 81%

Optimization and integration of trimethylsilane-based organosilicate glass and organofluorinated silicate glass dielectric thin films for Cu damascene process

Cheng

Wang

Hwang

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Integration of organosilicate glass (OSG) and organofluorinated silicate glass (OFSG) low-k materials deposited using trimethylsilane precursor as interlayer dielectric (ILD) was investigated in this study. Although the full OSG structure showed the lowest capacitance, this structure suffered the integrated challenge, such as the poor deposition uniformity, chemical ashing damage, and cracking issues. Thus, a hybrid ILD scheme is introduced, which is stacked with OSG and OFSG dielectrics to address these issues. The process for this hybrid ILD scheme was optimized for deposition uniformity, permittivity, mechanical strength, low-k material damage, and electromigration resistance. An optimized ILD structure was integrated into 0.13μm Cu damascene process technology and showed much improvement compared to the full OSG or OFSG structure. The results of this study indicated that the hybrid structure which consists of the OSG and OFSG dielectrics can be successfully implemented in fully integrated interconnect structure.

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Comparison of characteristics and integration of copper diffusion-barrier dielectrics

Cited by 40 publications

References 11 publications

Comprehensive comparison of electrical and reliability characteristics of various copper barrier films

Comprehensive comparison of electrical and reliability characteristics of various copper barrier films

Low-k SiC_xN_yFilms Prepared by Plasma-Enhanced Chemical Vapor Deposition Using 1,3,5-trimethyl-1,3,5-trivinylcyclotrisilazane Precursor

Optimization and integration of trimethylsilane-based organosilicate glass and organofluorinated silicate glass dielectric thin films for Cu damascene process

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Comparison of characteristics and integration of copper diffusion-barrier dielectrics

Cited by 40 publications

References 11 publications

Comprehensive comparison of electrical and reliability characteristics of various copper barrier films

Comprehensive comparison of electrical and reliability characteristics of various copper barrier films

Low-k SiCxNyFilms Prepared by Plasma-Enhanced Chemical Vapor Deposition Using 1,3,5-trimethyl-1,3,5-trivinylcyclotrisilazane Precursor

Optimization and integration of trimethylsilane-based organosilicate glass and organofluorinated silicate glass dielectric thin films for Cu damascene process

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Low-k SiC_xN_yFilms Prepared by Plasma-Enhanced Chemical Vapor Deposition Using 1,3,5-trimethyl-1,3,5-trivinylcyclotrisilazane Precursor