Comparison of cooling rates for hot carriers in GaAs/AlAs quantum wells based on macroscopic and microscopic phonon models

Zhang, J.-Z.; Zhu, Bang‐Fen; Huang, Jun

doi:10.1103/physrevb.59.13184

Cited by 13 publications

(14 citation statements)

References 29 publications

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“…2 the calculated hot-phonon occupation number generated during the hot-electron relaxation process in a 35/ 35 QW ͑the corresponding well and barrier widths are both 100 Å͒, which is biased with an electric field of 125 kV/ cm. This is clearly different from the hot-phonon population results for the corresponding unbiased QWs, 28 where only phonon modes with symmetric potential appear. The phonon modes are labeled near the corresponding curves.…”

Section: Resultscontrasting

confidence: 81%

“…We used the parabolic phonon dispersion 25 for bulk LO and TO modes to include the bulk-phonon dispersion. 28, most of which are taken or derived from Ref. 28, most of which are taken or derived from Ref.…”

Section: Resultsmentioning

confidence: 99%

“…27,28 Our numerical results show that, 28 while the guided-mode model presents the poorest results, the calculated energy-loss rates based on the slab model and the improved Huang-Zhu model 29,30 are almost the same when ignoring the HPE; however, with the HPE considered, the calculated cooling rate as well as the hot-phonon occupation number do depend upon the phonon models to be adopted. In fact, as shown in the previous articles, [24][25][26]28 the confined modes given by either the original or the improved Huang-Zhu formulas, and the interface modes in the dielectric continuum model are, respectively, identical to the microscopic calculation only when the bulkphonon dispersion is ignored. For hot electrons with a sheet density around 10 12 /cm 2 , the slab model has been found to overestimate the hot-phonon effect by more than 40% compared to the Huang-Zhu model, and about 75% compared to the microscopic calculation in which the phonon dispersion is fully included.…”

Section: Introductionmentioning

confidence: 83%

“…28 For the macroscopic phonon models, we use the improved version of the Huang-Zhu model 29,30 to calculate the Fröhlich interaction for the confined optical phonons, whose mode potential and optical displacement both vanish at the QW interfaces. 28 For the macroscopic phonon models, we use the improved version of the Huang-Zhu model 29,30 to calculate the Fröhlich interaction for the confined optical phonons, whose mode potential and optical displacement both vanish at the QW interfaces.…”

Section: Formalismmentioning

confidence: 99%

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Influence of longitudinal electric field on the hot-phonon effect in quantum wells

Zhang

Zhu

2006

Journal of Applied Physics

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Articles you may be interested inElectron-confined longitudinal optical phonon interaction and strong magnetic field effects on the binding energy in GaAs quantum wells Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion Using the Huang-Zhu model ͓K. Huang and B.-F. Zhu, Phys. Rev. B 38, 13377 ͑1988͔͒ for the optical phonons and associated carrier-phonon interactions in semiconductor superlattices, the effects of longitudinal electric field on the energy-loss rates ͑ELRs͒ of hot carriers as well as on the hot-phonon effect ͑HPE͒ in GaAs/ AlAs quantum wells ͑QWs͒ are studied systematically. Contributions of various bulklike and interface phonons to the hot-carrier relaxation are compared in detail, and comprehensively analyzed in relation to the intrasubband and intersubband scatterings for quantum cascade lasers. Due to the broken parity of the electron ͑hole͒ states in the electric field, the bulklike modes with antisymmetric potentials are allowed in the intrasubband relaxation processes, as well as the modes with symmetric potentials. As the interface phonon scattering is strong only in narrow wells, in which the electric field affects the electron ͑hole͒ states little, the ELRs of hot carriers through the interface phonon scattering are not sensitive to the electric field. The HPE on the hot-carrier relaxation process in the medium and wide wells is reduced by the electric field. The influence of the electric field on the hot-phonon effect in quantum cascade lasers is negligible. When the HPE is ignored, the ELRs of hot electrons in wide QWs are decreased noticeably by the electric field, but slightly increased by the field when considering the HPE. In contrast with the electrons, the ELRs of hot holes in wide wells are increased by the field, irrespective of the HPE.

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Section: Resultscontrasting

confidence: 81%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 83%

Section: Formalismmentioning

confidence: 99%

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Influence of longitudinal electric field on the hot-phonon effect in quantum wells

Zhang

Zhu

2006

Journal of Applied Physics

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“…In this circumstance it is necessary to use the correct normal modes of the GaN heterostructure to calculate the energy relaxation. Previous calculations for GaAs quantum wells have shown that the energy relaxation rates in the hot-phonon regime depend on the phonon models used [20,22].…”

Section: Introductionmentioning

confidence: 99%

Hot electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures: The sum rules for electron-phonon interactions and hot-phonon effect

Zhang

Dyson

Ridley

2015

Journal of Applied Physics

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Using the dielectric continuum (DC) and three-dimensional phonon (3DP) models, energy relaxation of the hot electrons in the quasi-two-dimensional channel of lattice-matched InAlN/AlN/GaN heterostructures is studied theoretically, taking into account non-equilibrium polar optical phonons, electron degeneracy, and screening from the mobile electrons. The electron power dissipation and energy relaxation time due to both half-space and interface phonons are calculated as functions of the electron temperature T e using a variety of phonon lifetime values from experiment, and then compared with those evaluated by the 3DP model. Thereby particular attention is paid to examination of the 3DP model to use for the hot-electron relaxation study. The 3DP model yields very close results to the DC model: with no hot phonons or screening the power loss calculated from the 3DP model is 5% smaller than the DC power dissipation, whereas slightly larger 3DP power loss (by less than 4% with a phonon lifetime from 0.1 to 1 ps) is obtained throughout the electron temperature range from room temperature to 2500 K after including both the hot-phonon effect (HPE) and screening. Very close results are obtained also for energy relaxation time with the two phonon models (within a 5% of deviation). However the 3DP model is found to underestimate the HPE by 9%. The Mori-Ando sum rule is restored by which it is proved that the power dissipation values obtained from the DC and 3DP models are in general different in the pure phonon emission process, except when scattering with interface phonons is sufficiently weak, or when the degenerate modes condition is imposed, which is also consistent with Register's scattering rate sum rule. The discrepancy between the DC and 3DP results is found to be caused by how much the high-energy interface phonons contribute to the energy relaxation: their contribution is enhanced in the pure emission process but is dramatically reduced after including the HPE. Our calculation with both phonon models has obtained a great fall in energy relaxation time at low electron temperatures (T e < 750 K) and slow decrease at the high temperatures with the use of decreasing phonon lifetime with T e . The calculated temperature dependence of the relaxation time and the high-temperature relaxation time ∼0.09 ps are in good agreement with experimental results.

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Electrically pumped terahertz laser based on a topological insulator quantum dot array

Huang

Shi

et al. 2020

Sci. China Phys. Mech. Astron.

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Comparison of cooling rates for hot carriers in GaAs/AlAs quantum wells based on macroscopic and microscopic phonon models

Cited by 13 publications

References 29 publications

Influence of longitudinal electric field on the hot-phonon effect in quantum wells

Influence of longitudinal electric field on the hot-phonon effect in quantum wells

Hot electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures: The sum rules for electron-phonon interactions and hot-phonon effect

Electrically pumped terahertz laser based on a topological insulator quantum dot array

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