Comparison of Cu2ZnSnS4 thin films and solar cell performance using Zn target with ZnS target

Lim, Kwang-Soo; Yu, Seong-Man; Khalkar, Arun; Oh, Tea-Sik; Nam, Junggyu; Shin, Dongwook; Yoo, Ji‐Beom

doi:10.1016/j.jallcom.2015.08.056

Cited by 14 publications

(10 citation statements)

References 32 publications

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“…The reduced grain size and reduced tin‐loss in the films were attributed to the early nucleation in the sulfurization process. Another study was carried out by Lim et al on a comparison of the structural and electrical properties of the CZTS films prepared with Zn or ZnS targets 22 . The CZTS film prepared by Zn target exhibited a larger grain size, smoother surface, and improved junction characteristics and electrical properties than the film prepared by ZnS target in this study.…”

Section: Introductionsupporting

confidence: 50%

“…However, it was observed that the sample A2 had more voids on its surface and exhibited more non‐uniform surface than the sample A1. This can be attributed to the liquid and solid states of Zn and ZnS during the selenization process mentioned above, respectively 22,58 . In other words, it can be thought that the melted Zn in the structure of the film during the selenization process at 560°C affected the nucleation and grain growth kinetics in the films and improved the morphological properties.…”

Section: Resultsmentioning

confidence: 96%

“…This can be attributed to the liquid and solid states of Zn and ZnS during the selenization process mentioned above, respectively. 22,58 In other words, it can be thought that the melted Zn in the structure of the film during the selenization process at 560 C affected the nucleation and grain growth kinetics in the films and improved the morphological properties. The thicknesses of the samples A1 and A2 were determined as 1.25 and 1.10 μm by cross-sectional SEM analysis, respectively.…”

Section: F I G U R E 4 Raman Shifts Of the Samples A1 And A2 [Colour mentioning

confidence: 99%

“…However, there have been a limited number of papers focusing on the types of targets used in the deposition of the precursor film in the literature. [22][23][24][25] Tanaka et al reported that they obtained CZTS films with Zn-poor compositions at temperatures above 450 C due to the high vapor pressure and the loss of Zn by using metallic Zn target. 26 Therefore, they suggested using binary sulfide ZnS target instead of metallic Zn target in precursor films to avoid this problem.…”

mentioning

confidence: 99%

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Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

et al. 2020

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Summary Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 absorber films were grown on soda lime glass and Mo‐coated soda lime glass substrates by deposition of the precursor films via RF magnetron sputtering method in the stacking orders of Cu/Sn/Zn/Mo/SLG and Cu/Sn/ZnS/Mo/SLG using metallic Zn or binary sulfide ZnS targets and subsequently carrying out of selenization process. It was aimed to find out the effect of Zn or ZnS target types and the small amount of S originated from ZnS target material used in the deposition of precursor films on the structural, morphological, optical, and electrical characteristics of the films to be selenized. XRD and Raman spectroscopy analysis showed that the kesterite CZTSe structure was predominantly formed in both cases where Zn and ZnS targets were used. According to the EDX analysis, S content in the prepared film using ZnS target was only around 1.79 at%. This indicated that a considerable amount of S in the film was driven out during the selenization process. Scanning electron microscopy analysis revealed that ZnS target material contributed to the achievement of the absorber films with larger grain size. It was also determined that the thickness of the interfacial MoSe2 film between the absorber and Mo films decreased by using ZnS target in the precursor film. This was attributed to ZnS layer with a high melting point acting as a barrier layer over Mo film and retarding the diffusion of Se into the Mo film during the selenization process. In addition, the band gap energy values of the Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 films were found to be 1.18 and 1.28 eV, respectively.

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Section: Introductionsupporting

confidence: 50%

Section: Resultsmentioning

confidence: 96%

Section: F I G U R E 4 Raman Shifts Of the Samples A1 And A2 [Colour mentioning

confidence: 99%

mentioning

confidence: 99%

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Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

et al. 2020

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“…Copper Zinc Tin Sulphide (CZTS) is a good substitute for present photovoltaic and photocatalytic materials [9][10][11]. CZTS is better than Copper Indium Selenium (CIS) and copper indium gallium selenide (CIGS) since it is composed of scarce, expensive, and relatively toxic materials.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of 2D-CZTS nanoplate as photocathode material for efficient PEC water splitting

Mahalakshmi¹,

Venugopal²,

Ramachandran

et al. 2021

J Mater Sci: Mater Electron

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Fabrication of economically viable photocathode for hydrogen energy production through solar water splitting is a major research among the scientific community for a decade. P-type compound Cu2ZnSnS4 (CZTS) is very interesting material due to its absorption property, earth-abundant constituents and environmental friendliness that serves as a suitable candidate to act as a photocathode. In the present work, Cu2ZnSnS4 (CZTS) nanoparticles are synthesized by simple one-step chemical method and annealed at 350 °C for three different times (60 minutes, 90 minutes and 120 minutes). The effect of annealing time on the structural, optical and photoelectrochemical properties are investigated. XRD pattern indicates the formation of tetragonal crystal structure and the crystallinity increases according to the annealing time. 2-D nanoplate morphology is obtained for the sample that was annealed for 120 minutes. From the absorption spectra, it was found that the band gap decreases with increase of annealing time. Further, the prepared nanoparticle thin films are used as a cathode for photoelectrochemical water splitting application. Among these, the nanoparticles that are annealed for 120 minutes showed higher photocurrent density when compared to nanoparticles annealed for 60 minutes and 90 minutes.

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Influence of stacking order and intermediate phase at low temperature on Cu2ZnSnS4 thin film formation for solar cell

Lim

Nam

et al. 2018

J Mater Sci: Mater Electron

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Comparison of Cu2ZnSnS4 thin films and solar cell performance using Zn target with ZnS target

Cited by 14 publications

References 32 publications

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Synthesis of 2D-CZTS nanoplate as photocathode material for efficient PEC water splitting

Influence of stacking order and intermediate phase at low temperature on Cu2ZnSnS4 thin film formation for solar cell

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Comparison of Cu2ZnSnS4 thin films and solar cell performance using Zn target with ZnS target

Cited by 14 publications

References 32 publications

Investigation on the properties of Cu 2 ZnSnSe 4 and Cu 2 ZnSn(S,Se) 4 absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Investigation on the properties of Cu 2 ZnSnSe 4 and Cu 2 ZnSn(S,Se) 4 absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Synthesis of 2D-CZTS nanoplate as photocathode material for efficient PEC water splitting

Influence of stacking order and intermediate phase at low temperature on Cu2ZnSnS4 thin film formation for solar cell

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Product

Resources

About

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks