Comparison of different alloy buffer concepts for (SimGen)p superlattices

Dettmer, K.; Behner, U.; Beserman, R.

doi:10.1016/0022-0248(95)00403-3

Cited by 3 publications

(1 citation statement)

References 16 publications

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“…[4][5][6][7] The epitaxial growth of gradedand constant-composition SiGe layers on a Si substrate is one of the techniques of producing crystals with low threading-dislocation density. 8,9) The crystallinity of the SiGe crystals has been evaluated by means of X-ray diffraction, [10][11][12][13][14][15][16][17][18] Raman spectrometry 19,20) and other techniques. 21,22) The samples evaluated in most studies, however, have often been in a research stage.…”

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Anisotropic Lattice Deformation Observed in a Commercially Available Strained-Si Wafer

Fukuda

Tomita

Hayashi

et al. 2006

Jpn. J. Appl. Phys.

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The average and local lattice structures of a strained-Si layer and a SiGe layer epitaxially grown on a [001]-oriented Si wafer are evaluated by means of high-resolution X-ray diffractometry using a usual X-ray beam and a highly parallel synchrotron X-ray microbeam. Lattices in the constant composition of the SiGe (CC) layer are greatly disarranged mainly due to an anisotropic lattice tilt feature with respect to the [110] and [110] directions in the surface plane. Although the crystallinity of the strained-Si layer was found to follow directly that of lattice tilt variations in the CC layer, the lattice parameter of the strained-Si layer still has the expected value.

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