Comparison of Different Finite Element Models for the Simulation of the Ring-Ball on Ring Test

Abstract

Monocrystalline silicon wafers are widely used in photovoltaic industry. The trend towards thinner wafers leads to higher breakage rates in the production process. In this context, the characterization of the mechanical strength becomes necessary. Different fracture tests as the ring/ball on ring are carried out. This paper presents different ways to simulate these tests. Analytical methods are applied in a first step. Simplified FE models (with shell elements and an axisymmetric model) that take into account non linearities existing in the test are presented and a 3d solid model is detailed. Results in terms of calculation time, stress distribution, adjustment to the tests and fitting to a Weibull distribution are compared.

On the mechanical strength of monocrystalline, multicrystalline and quasi‐monocrystalline silicon wafers: a four‐line bending test study

“…Therefore, the FE method is likely to be chosen for the analysis. This numerical technique obtains approximate solutions to very complex problems, being the most extended for this type of studies [].…”

“…The test was suitably modeled with a 3D FE model, on the basis of eight node shell elements . The material anisotropy was considered for monocrystalline Cz and quasi‐monocrystalline cases, implementing the large displacements formulation.…”

Estudio de las propiedades mecánicas de obleas de silicio

“…En este caso, fueron además presentadas en la ponencia Comparison of Dierent FE Models for the Simulation of Ring/Ball on Ring Test [8]. Este estudio se centró en el ensayo ball-on-ring que es el caso extremo del ensayo ring-onring por lo que las conclusiones extraídas se consideran válidas para ambos casos.…”