Comparison of different methods for simulating the effect of specular ion reflection on microtrenching during dry etching of polysilicon

Kunder, D.; Bär, E.

doi:10.1016/j.mee.2008.01.038

Cited by 4 publications

(4 citation statements)

References 4 publications

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“…These deviations could stem from (i) ion implanting and subsequent target surface swelling, and (ii) amorphization and therefore altered sputter yield [33]. So far, IonShaper R does not take into account these effects, but there are already successful developments to tackle this problem [34,35].…”

Section: D Cross-sectional Shape Simulationmentioning

confidence: 99%

Ion multi-beam direct sputtering of Si imprint stamps and simulation of resulting structures

Eder-Kapl

Steiger‐Thirsfeld²,

Wellenzohn

et al. 2012

J. Micromech. Microeng.

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The multibeam charged particle nanopatterning tool has been used to fabricate template structures with 10 keV Ar + ion beam sputtering in Si. Trench array structures of 130 nm width, 280 nm depth and 80 • sidewall angle have been cross sectioned and examined by the scanning electron microscopy. The experiments have been compared with the sputter simulation code IonShaper R . A double Lorentz tool point spread function with 21.5 nm full width at half-maximum has been used for the simulations. For different layout geometries but identical simulation parameters, the simulation results are in good agreement with the experiments.

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Section: D Cross-sectional Shape Simulationmentioning

confidence: 99%

Ion multi-beam direct sputtering of Si imprint stamps and simulation of resulting structures

Eder-Kapl

Steiger‐Thirsfeld²,

Wellenzohn

et al. 2012

J. Micromech. Microeng.

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“…However, the flux distributions themselves depend on the coverages, since the effective sticking probabilities usually depend on the fraction of free surface sites. For example, the effective sticking probability in [4] is modeled by ( )…”

Section: Surface Kineticsmentioning

confidence: 99%

“…A more promising approach is based on the Monte Carlo method. By simulating many particle trajectories the surface rates can be determined (3,4). Compared to common techniques, where the particle transport equation is solved conventionally by integration over the surface, the Monte Carlo method allows the solution of more complex transport equations.…”

Section: Introductionmentioning

confidence: 99%

Three-Dimensional Plasma Etching Simulation using Advanced Ray Tracing and Level Set Techniques

Ertl

Selberherr

2009

ECS Trans.

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We present three-dimensional simulation techniques for plasma etching processes. Models based on Langmuir-type adsorption and on ballistic particle transport at feature scale can be efficiently solved in three dimensions. Surface coverages are self-consistently calculated. The local sputter rates of ions and the fluxes of neutrals are computed using modern ray tracing algorithms. In this way angle and energy dependent sputter yields or specular reflections of ions can be incorporated in a natural manner. For the time evolution of the surface we apply a recently developed fast multilevel-set framework. Our simulation techniques are demonstrated using a SF 6 /O 2 plasma etching process model.

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“…Various combinations of methods to handle both tasks in three-dimensions are discussed in [1]. A new combination using the level set method for surface representation and a Monte Carlo method for flux calculation was recently reported [2], [3]. In the following we describe techniques which enable topography simulations of large three-dimensional geometries.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional topography simulation using advanced level set and ray tracing methods

Ertl¹,

Selberherr²

2008

2008 International Conference on Simulation of Semiconductor Processes and Devices

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Comparison of different methods for simulating the effect of specular ion reflection on microtrenching during dry etching of polysilicon

Cited by 4 publications

References 4 publications

Ion multi-beam direct sputtering of Si imprint stamps and simulation of resulting structures

Ion multi-beam direct sputtering of Si imprint stamps and simulation of resulting structures

Three-Dimensional Plasma Etching Simulation using Advanced Ray Tracing and Level Set Techniques

Three-dimensional topography simulation using advanced level set and ray tracing methods

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