Comparison of ESD protection capability of lateral BJT, SCR and bidirectional. SCR for hi-voltage BiCMOS circuits

Abstract

Triggering structures BJT, SCR and bidirectional SCR for high voltage BiCMOS process onchip ESD protection have been developed and analyzed using physical process and device simulation and pulse measurements. A ten-fold increase in the protection levels compared to the reference BJT structures have been demonstrated using a cylindrical lateral SCR and bidirectional SCR.

ESD design challenges in state-of-the-art analog technologies

“…Additionally, Gate voltage can be controlled externally to further modulate SCR's triggering voltage, which relies on the drain extension to substrate breakdown. Several works have been published exploiting this concept [17][18][19][20].…”