Comparison of EUV and e-beam lithographic technologies for sub-22-nm node patterning

Cameron, James F.; Thackeray, Jim; Sung, Jin Wuk; Coley, Suzanne M.; Jain, Vipul; Ongayi, Owendi; Wagner, Mike; LaBeaume, Paul; Kwok, Amy; Valeri, David; Hellion, Marie; Icard, B.; Dal’zotto, B.; Sourd, Claire; Pain, Laurent

doi:10.1117/12.916598

Cited by 4 publications

(5 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Currently, ion beam methods have not been widely adopted in industry when compared to electron beam methods, which are time-tested and capable of high throughput [10][11][12][13]. He + -beam lithography (HIL) is an emerging technique that is capable of materials modification at the nanoscale, with feature resolution down to 10 nm in suitable substrates [14,15].…”

Section: Introductionmentioning

confidence: 99%

Direct-write crosslinking in vacuum-deposited small-molecule films using focussed ion and electron beams

Hartl

East

et al. 2019

Nanotechnology

View full text Add to dashboard Cite

Recent advances in helium ion microscopy (HIM) have enabled the use of fine-focused He + beams to image and shape materials at the nanoscale. In addition to traditional ion milling, the beam can also be used to induce reactions, such as cross-linking, in films of organic molecules. Here, we compare the use of focused ion and electron beams to fabricate spatially-defined crosslinked features in nanometre-thick films of tetracene. Ion and electron beam treatments were performed using the focussed energetic beams in a HIM and a scanning electron microscope, respectively. The patterned samples were analysed by optical microscopy, HIM, atomic force microscopy and nanoindentation. For samples fabricated using both energetic beams, the total deposited particle dose could be used to modify the optical properties, thickness and hardness of the dosed regions. X-ray photoelectron spectroscopy revealed that the dosed regions exhibited a higher sp3 content, consistent with crosslinking; rinsing in solvent showed that the patterned regions were insoluble and could be isolated by removing the unmodified film through dissolution. These molecular nanopatterns demonstrate the promise for ultrahigh resolution chemical lithography, and for fabrication of nanocomponents with tailored physical properties.

show abstract

Section: Introductionmentioning

confidence: 99%

Direct-write crosslinking in vacuum-deposited small-molecule films using focussed ion and electron beams

Hartl

East

et al. 2019

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…Extreme ultraviolet (EUV) lithography at 13.5 nm has been identified as a leading candidate for nextgeneration high-resolution patterning technology. 3 PAGs have been studied in detail concerning their mechanism(s) to produce acid upon direct photolysis and sensitization. 4−7 Electron transfer to PAG has been proposed to be one excited-state pathway that leads to the production of acid.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Importantly, sulfonium cations have been shown to efficiently quench triplet excited states through triplet-to-triplet energy transfer. 22 However, energy transfer is ruled out as a quenching mechanism, as the PAG excited triplets are energetically well above 3 [Ir(COD)(μ-Me 2 pz)] 2 *. Thus, the observed quenching processes are attributable to reduction of the PAGs.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Such lithographic patterning schemes are important as they are used to manufacture advanced integrated circuits for semiconductor chips. , The onium salt photoacid generators (PAGs, Figure ) used in photolithography have been the subject of much research owing to the ability to tune their properties to the different wavelengths typically used in modern optical lithography (248 and 193 nm). Extreme ultraviolet (EUV) lithography at 13.5 nm has been identified as a leading candidate for next-generation high-resolution patterning technology …”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Driving Force Dependence of Electron Transfer from Electronically Excited [Ir(COD)(μ-Me₂pz)]₂ to Photo-Acid Generators

et al. 2017

Self Cite

View full text Add to dashboard Cite

We report the rates of electron transfer (ET) reactions of electronically excited [Ir(COD)(μ-Mepz)] with onium salt photoacid generators (PAGs). The reduction potentials of the PAGs span a large electrochemical window that allows determination of the driving force dependence of the ET reactions. Rate constants of ET from electronically excited [Ir(COD)(μ-Mepz)] to onium PAGs are determined by the reaction driving force until the diffusion limit in acetonitrile is reached.

show abstract

“…[3][4][5][6][7][8][9] In particular, polymer-bound photoacid generators (PAGs) (anion bound) are actively investigated as EUV resists. [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] Many experimental results have shown that polymerbound PAGs have higher resolution than conventional resists (polymer-blend PAGs). On the other hand, the sensitivities of polymer-bound PAGs (anion bound) and polymer-blend PAGs are almost the same.…”

Section: Introductionmentioning

confidence: 99%

Study of Interrelation Between Reaction of Polymer-Bound/Blend Photoacid Generator with Solvated Electron and Acid Generation Efficiency

Enomoto¹,

Nguyen²,

Tagawa³

2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Polymer-bound photoacid generators (PAGs) (anion bound) and their corresponding polymers were synthesized for evaluation of the reactivity of polymer-bound PAGs with secondary electrons in solutions by the electron beam pulse radiolysis method. In the solutions, the rate constants of polymer-bound PAGs are much lower than those of polymer-blend PAGs. In addition, we evaluated the acid generation efficiencies of polymer-bound PAGs. As a result, despite the film state, the acid generation efficiency of polymer-bound PAGs are about 10% lower than those of the polymer-blend PAGs. These differences are explained by the difference in stabilization effects between polymer-bound PAGs and polymer-blend PAGs in both solutions and films.

show abstract

Comparison of EUV and e-beam lithographic technologies for sub-22-nm node patterning

Cited by 4 publications

References 0 publications

Direct-write crosslinking in vacuum-deposited small-molecule films using focussed ion and electron beams

Direct-write crosslinking in vacuum-deposited small-molecule films using focussed ion and electron beams

Driving Force Dependence of Electron Transfer from Electronically Excited [Ir(COD)(μ-Me₂pz)]₂ to Photo-Acid Generators

Study of Interrelation Between Reaction of Polymer-Bound/Blend Photoacid Generator with Solvated Electron and Acid Generation Efficiency

Contact Info

Product

Resources

About

Comparison of EUV and e-beam lithographic technologies for sub-22-nm node patterning

Cited by 4 publications

References 0 publications

Direct-write crosslinking in vacuum-deposited small-molecule films using focussed ion and electron beams

Direct-write crosslinking in vacuum-deposited small-molecule films using focussed ion and electron beams

Driving Force Dependence of Electron Transfer from Electronically Excited [Ir(COD)(μ-Me2pz)]2 to Photo-Acid Generators

Study of Interrelation Between Reaction of Polymer-Bound/Blend Photoacid Generator with Solvated Electron and Acid Generation Efficiency

Contact Info

Product

Resources

About

Driving Force Dependence of Electron Transfer from Electronically Excited [Ir(COD)(μ-Me₂pz)]₂ to Photo-Acid Generators