Comparison of experiment and theory for tunneling in In-Ge: P Schottky-barrier junctions

Christopher, J. E.; Darley, H. M.; Lehman, G. W.; Tripathi, S.

doi:10.1103/physrevb.11.754

Cited by 8 publications

(1 citation statement)

References 16 publications

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“…Modifications were used to account for the ellipsoidal nature of the constant-energy surfaces (Christopher et al 1975). The same computer program used to generate the theoretical curves for germanium (Christopher et al1975) was used here with the proper adjustments made in the physical constants (table l), and further refinements explained below.…”

Section: Introductionmentioning

confidence: 99%

Protein Crystal Growth Using Laser-Processed Seed Crystals

Takeuchi

Kitano

Adachi

et al. 2005

Jpn. J. Appl. Phys.

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Schottky barrier tunnel junctions were prepared by cleaving degenerately doped silicon in a stream of evaporating indium. For heavily doped samples the bias dependence of the incremental resistance at helium temperatures showed agreement with many features of the theoretical predictions for a free electron model. For these samples striations, regular doping density variations reportedly present in all silicon crystals, played a minimal role. For lowly doped samples disagreement between theory and experiment was observed. The inapplicability to lowly doped silicon of the simple theory and the effect of striations are both interpreted to contribute to the deviations. Striations are essential for understanding the radiation compensations results; behaviour in a single junction appropriate to a parallel combination of junctions with different doping density was observed. For strongly compensated material the zero-bias conductance exhibited an exp( -C/T'I4) behaviour characteristic of tunnelling via localised states.

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Section: Introductionmentioning

confidence: 99%